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2A05G R0G

Description
DIODE GEN PURP 600V 2A DO204AC
Categorysemiconductor    Discrete semiconductor   
File Size197KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

2A05G R0G Overview

DIODE GEN PURP 600V 2A DO204AC

2A05G R0G Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)600V
Current - average rectification (Io)2A
Voltage at different If - Forward (Vf1V @ 2A
speedStandard recovery >500ns, >200mA (Io)
Current at different Vr - Reverse leakage current5µA @ 600V
Capacitance at different Vr, F15pF @ 4V,1MHz
Installation typeThrough hole
Package/casingDO-204AC, DO-15, axial
Supplier device packagingDO-204AC(DO-15)
Operating Temperature - Junction-55°C ~ 150°C
2A01G thru 2A07G
CREAT BY ART
FEATURES
- Glass passivated chip junction
- High efficiency, Low VF
- High current capability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated Rectifiers
MECHANICAL DATA
Case:
DO-204AC (DO-15)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Weight:
0.4g (approximately)
DO-204AC (DO-15)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@2A
Maximum reverse current @ rated VR
Typical junction capacitance (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300
μs,
1% duty cycle
Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
T
J
=25
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Cj
R
θJC
R
θJL
R
θJA
T
J
T
STG
1.1
5
100
15
22
25
60
- 55 to +150
- 55 to +150
O
2A
01G
50
35
50
2A
02G
100
70
100
2A
03G
200
140
200
2A
04G
400
280
400
2
70
2A
05G
600
420
600
2A
06G
800
560
800
2A
07G
1000
700
1000
UNIT
V
V
V
A
A
1.0
V
μA
pF
C/W
O
O
C
C
Document Number: DS_D1405014
Version: H14

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