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RN1103MFV(TPL3)

Description
TRANS PREBIAS NPN 150MW VESM
CategoryDiscrete semiconductor    The transistor   
File Size858KB,8 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

RN1103MFV(TPL3) Overview

TRANS PREBIAS NPN 150MW VESM

RN1103MFV(TPL3) Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
Reach Compliance Codeunknown
Factory Lead Time12 weeks
RN1101MFV to RN1106MFV
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN1101MFV, RN1102MFV, RN1103MFV
RN1104MFV, RN1105MFV, RN1106MFV
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
0.22 ± 0.05
Unit: mm
1.2 ± 0.05
Ultra-small package, suited to very high density mounting
Incorporating a bias resistor into the transistor reduces the number of parts,
so enabling the manufacture of ever more compact equipment and lowering
assembly cost.
1.2 ± 0.05
A wide range of resistor values is available for use in various circuits.
Complementary to the RN2101MFV to RN2106MFV
0.8 ± 0.05
1
0.4
1
3
2
0.13 ± 0.05
Equivalent Circuit and Bias Resistor Values
Type No.
RN1101MFV
RN1102MFV
RN1103MFV
RN1104MFV
RN1105MFV
RN1106MFV
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
0.5 ± 0.05
0.4
VESM
JEDEC
JEITA
TOSHIBA
1. BASE
2. EMITTER
3. COLLECTOR
2-1L1A
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1101MFV to 1106MFV
RN1101MFV to 1106MFV
RN1101MFV to 1104MFV
RN1105MFV, 1106MFV
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note 1)
T
j
T
stg
Rating
50
50
10
5
100
150
150
−55
to 150
Weight: 1.5 mg (typ.)
Unit
V
V
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
(25.4
mm
×
25.4 mm
×
1.6 mm)
Pad Dimension(Reference)
0.5
Unit: mm
0.45
1.15
0.4
0.45
0.4
0.4
Start of commercial production
2005-02
1
2016-09-14
0.32 ± 0.05
0.80 ± 0.05

RN1103MFV(TPL3) Related Products

RN1103MFV(TPL3) RN1103MFV,L3F RN1102MFV,L3F
Description TRANS PREBIAS NPN 150MW VESM TRANS PREBIAS NPN 150MW VESM TRANS PREBIAS NPN 50V 0.15W VESM
Transistor type - NPN - Pre-biased NPN - Pre-biased
Current - Collector (Ic) (Maximum) - 100mA 100mA
Voltage - collector-emitter breakdown (maximum) - 50V 50V
Resistor - Substrate (R1) - 22 kOhms 10 kOhms
Resistor - Emitter Base (R2) - 22 kOhms 10 kOhms
DC current gain (hFE) at different Ic, Vce (minimum value) - 70 @ 10mA,5V 50 @ 10mA,5V
Vce saturation value (maximum value) when different Ib,Ic - 300mV @ 500µA,5mA 300mV @ 500µA,5mA
Current - collector cutoff (maximum) - 500nA 500nA
Power - Max - 150mW 150mW
Installation type - surface mount surface mount
Package/casing - SOT-723 SOT-723
Supplier device packaging - VESM VESM
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