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RS1ML RHG

Description
DIODE GEN PURP 800MA SUB SMA
Categorysemiconductor    Discrete semiconductor   
File Size357KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

RS1ML RHG Overview

DIODE GEN PURP 800MA SUB SMA

RS1ML RHG Parametric

Parameter NameAttribute value
Diode typestandard
Current - average rectification (Io)800mA
Voltage at different If - Forward (Vf1.3V @ 800mA
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)500ns
Current at different Vr - Reverse leakage current5µA @ 1000V
Capacitance at different Vr, F10pF @ 4V,1MHz
Installation typesurface mount
Package/casingDO-219AB
Supplier device packagingSub SMA
Operating Temperature - Junction-55°C ~ 150°C
RS1AL - RS1ML
Taiwan Semiconductor
CREAT BY ART
0.8A, 50V - 1000V Surface Mount Fast Recovery Rectifiers
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Fast switching for high efficiency
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
Sub SMA
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.019 g (approximately)
Sub SMA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@ 0.8 A
Maximum reverse current @ rated V
R
Typical junction capacitance (Note 2)
Maximum reverse recovery time (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Measured at 1 MHz and Applied VR=4.0 Volts.
Note 3: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
T
J
=25°C
T
J
=125°C
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
J
t
rr
R
θJL
R
θJA
T
J
T
STG
150
32
105
- 55 to +150
- 55 to +150
SYMBOL
RS1
AL
RAL
50
35
50
RS1
BL
RBL
100
70
100
RS1
DL
RDL
200
140
200
RS1
GL
RGL
400
280
400
0.8
30
1.3
5
50
10
250
500
RS1
JL
RJL
600
420
600
RS1
KL
RKL
800
560
800
RS1
ML
RML
1000
700
1000
V
V
V
A
A
V
μA
pF
ns
°C/W
°C
°C
UNIT
Document Number: DS_D1409037
Version: M15
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