RS1BL MQG datasheet, PDF - EEWORLD Datasheet

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RS1BL MQG: DescriptionDIODE GEN PURP 100V 800MA SUBSMA; Categorysemiconductor Discrete semiconductor; File Size357KB，4 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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RS1BL MQG Overview

DIODE GEN PURP 100V 800MA SUBSMA

RS1BL MQG Parametric

Parameter Name	Attribute value
Diode type	standard
Voltage - DC Reverse (Vr) (Maximum)	100V
Current - average rectification (Io)	800mA
Voltage at different If - Forward (Vf	1.3V @ 800mA
speed	Fast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)	150ns
Current at different Vr - Reverse leakage current	5µA @ 100V
Capacitance at different Vr, F	10pF @ 4V，1MHz
Installation type	surface mount
Package/casing	DO-219AB
Supplier device packaging	Sub SMA
Operating Temperature - Junction	-55°C ~ 150°C

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RS1AL - RS1ML

Taiwan Semiconductor

CREAT BY ART

0.8A, 50V - 1000V Surface Mount Fast Recovery Rectifiers

FEATURES

- Glass passivated junction chip

- Ideal for automated placement

- Fast switching for high efficiency

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

MECHANICAL DATA

Case:

Sub SMA

Molding compound, UL flammability classification rating 94V-0

Moisture sensitivity level: level 1, per J-STD-020

Part No. with suffix "H" means AEC-Q101 qualified

Packing code with suffix "G" means green compound (halogen-free)

Terminal:

Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 2 whisker test

Polarity:

Indicated by cathode band

Weight:

0.019 g (approximately)

Sub SMA

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

=25°C unless otherwise noted)

PARAMETER

Marking code

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

Maximum instantaneous forward voltage (Note 1)

@ 0.8 A

Maximum reverse current @ rated V

Typical junction capacitance (Note 2)

Maximum reverse recovery time (Note 3)

Typical thermal resistance

Operating junction temperature range

Storage temperature range

Note 1: Pulse test with PW=300μs, 1% duty cycle

Note 2: Measured at 1 MHz and Applied VR=4.0 Volts.

Note 3: Reverse Recovery Test Conditions: I

=0.5A, I

=1.0A, I

=0.25A

=25°C

=125°C

RRM

RMS

F(AV)

FSM

θJL

θJA

STG

150

105

- 55 to +150

SYMBOL

RS1

RAL

RS1

RBL

100

RS1

RDL

200

140

200

RS1

RGL

400

280

400

0.8

1.3

250

500

RS1

RJL

600

420

600

RS1

RKL

800

560

800

RS1

RML

1000

700

1000

μA

°C/W

°C

UNIT

Document Number: DS_D1409037

Version: M15

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