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RSFBL R3G

Description
DIODE GEN PURP 100V 500MA SUBSMA
Categorysemiconductor    Discrete semiconductor   
File Size352KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

RSFBL R3G Overview

DIODE GEN PURP 100V 500MA SUBSMA

RSFBL R3G Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)100V
Current - average rectification (Io)500mA
Voltage at different If - Forward (Vf1.3V @ 500mA
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)150ns
Current at different Vr - Reverse leakage current5µA @ 100V
Capacitance at different Vr, F4pF @ 4V,1MHz
Installation typesurface mount
Package/casingDO-219AB
Supplier device packagingSub SMA
Operating Temperature - Junction-55°C ~ 150°C
RSFAL - RSFML
Taiwan Semiconductor
CREAT BY ART
0.5A, 50V - 1000V Surface Mount Fast Recovery Rectifiers
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- High temperature metallurgically bonded construction
- Fast switching for high efficiency
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Sub SMA
MECHANICAL DATA
Case:
Sub SMA
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.019 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@ 0.5 A
Maximum reverse current @ rated V
R
Typical junction capacitance (Note 2)
Maximum reverse recovery time (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Measured at 1 MHz and Applied VR=4.0 Volts.
Note 3: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
T
J
=25°C
T
J
=125°C
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
J
t
rr
R
θJC
R
θJA
T
J
T
STG
150
32
150
- 55 to +150
- 55 to +150
SYMBOL
RSF
AL
FAL
50
35
50
RSF
BL
FBL
100
70
100
RSF
DL
FDL
200
140
200
RSF
GL
FGL
400
280
400
0.5
10
1.3
5
50
4
250
500
RSF
JL
FJL
600
420
600
RSF
KL
FKL
800
560
800
RSF
ML
FML
1000
700
1000
V
V
V
A
A
V
μA
pF
ns
°C/W
°C
°C
UNIT
Document Number: DS_D1410008
Version: L15

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