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TK17N65W,S1F

Description
MOSFET N-CH 650V 17.3A T0247
Categorysemiconductor    Discrete semiconductor   
File Size247KB,10 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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TK17N65W,S1F Overview

MOSFET N-CH 650V 17.3A T0247

TK17N65W,S1F Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)650V
Current - Continuous Drain (Id) at 25°C17.3A(Ta)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs200 milliohms @ 8.7A, 10V
Vgs (th) (maximum value) when different Id3.5V @ 900µA
Gate charge (Qg) at different Vgs (maximum value)45nC @ 10V
Vgs (maximum value)±30V
Input capacitance (Ciss) at different Vds (maximum value)1800pF @ 300V
FET function-
Power dissipation (maximum)165W(Tc)
Operating temperature150°C(TJ)
Installation typeThrough hole
Supplier device packagingTO-247
Package/casingTO-247-3
TK17N65W
MOSFETs
Silicon N-Channel MOS (DTMOS)
TK17N65W
1. Applications
Switching Voltage Regulators
2. Features
(1)
(2)
(3)
Low drain-source on-resistance: R
DS(ON)
= 0.17
(typ.)
by used to Super Junction Structure : DTMOS
Easy to control Gate switching
Enhancement mode: V
th
= 2.5 to 3.5 V (V
DS
= 10 V, I
D
= 0.9 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain (Heatsink)
3: Source
TO-247
25
4. Absolute Maximum Ratings (Note) (T
a
= 25
unless otherwise specified)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
Storage temperature
Mounting torque
(Note 1)
(Note 1)
(T
c
= 25)
(Note 2)
(Note 1)
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
I
DR
I
DRP
T
ch
T
stg
TOR
Rating
650
±30
17.3
69.2
165
210
4.4
17.3
69.2
150
-55 to 150
0.8
Nm
W
mJ
A
A
Unit
V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
1
2013-08
2014-02-25
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