Preliminary Technical Information
High Voltage, BiMOSFET
TM
Monolithic Bipolar MOS
Transistor
IXBT42N300HV
IXBH42N300HV
V
CES
= 3000V
I
C110
= 42A
V
CE(sat)
3.0V
TO-268HV (IXBT)
G
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
T
SC
(SCSOA)
P
C
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247HV)
TO-268HV
TO-247HV
Test Conditions
T
C
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GE
= 1M
Continuous
Transient
T
C
= 25°C
T
C
= 110°C
T
C
= 25°C, 1ms
V
GE
= 15V, T
VJ
= 125°C, R
G
= 20
Clamped Inductive Load
V
GE
= 15V, T
J
= 125°C,
R
G
= 82, V
CE
= 1500V, Non-Repetitive
T
C
= 25°C
Maximum Ratings
3000
3000
± 25
± 35
104
42
400
I
CM
= 84
1500
10
500
-55 ... +150
150
-55 ... +150
300
260
1.13/10
4
6
V
V
V
V
A
A
A
A
V
μs
W
°C
°C
°C
°C
°C
Nm/lb.in
g
g
E
C
(Tab)
TO-247HV (IXBH)
G
E
C
G = Gate
E = Emitter
C (Tab)
C
= Collector
Tab = Collector
Features
High Voltage Package
High Blocking Voltage
High Peak Current Capability
Low Saturation Voltage
FBSOA
SCSOA
Advantages
Symbol Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 1mA, V
GE
= 0V
= 1mA, V
CE
= V
GE
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
3000
3.0
250
±200
2.5
T
J
= 125°C
3.1
3.0
5.0
50
V
V
μA
μA
nA
V
V
Applications
Low Gate Drive Requirement
High Power Density
V
CE
= 0.8 • V
CES
, V
GE
= 0V
V
CE
= 0V, V
GE
= ± 25V
I
C
= 42A, V
GE
= 15V, Note 1
Laser Generators
Capacitor Discharge Circuits
AC Switches
Protection Circuits
© 2014 IXYS CORPORATION, All Rights Reserved
DS100512A(12/14)
IXBT42N300HV
IXBH42N300HV
Symbol Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
g
fS
C
ies
C
oes
C
res
R
Gi
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
R
thJC
R
thCS
TO-247HV
0.21
Resistive Switching Times, T
J
= 25°C
I
C
= 42A, V
GE
= 15V
V
CE
= 1500V, R
G
= 20
Resistive Switching Times, T
J
= 125°C
I
C
= 42A, V
GE
= 15V
V
CE
= 1500V, R
G
= 20
I
C
= 42A, V
GE
= 15V, V
CE
= 1000V
Gate Input Resistance
V
CE
= 25V, V
GE
= 0V, f = 1MHz
I
C
= 42A, V
CE
= 10V, Note 1
Characteristic Values
Min.
Typ.
Max.
28
45
4780
170
56
3.0
200
28
75
72
330
445
610
72
580
460
490
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
0.25 °C/W
°C/W
TO-247HV Outline
Reverse Diode
Symbol Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
V
F
t
rr
I
RM
I
F
= 42A, V
GE
= 0V, Note 1
I
F
= 21A, V
GE
= 0V, -di
F
/dt = 100A/μs
V
R
= 100V, V
GE
= 0V
1.7
43
Characteristic Values
Min.
Typ.
Max
2.5
V
μs
A
e
e1
R
E
0P
Q S
D1
4
D2
1 2
D3
3
L1
A3
2X
A1
E2
E3
4X
A2
A
0P1
E1
1
e
3
2
L4
e
D
TO-268HV Outline
E
L2
A
C2
E1
H
3
D2
2
1
D1
A1
C
D3
b
PINS:
1 - Gate 2 - Emitter
3 - Collector
L3
A2
L
D
L
c
b
PINS:
1 - Gate 2 - Emitter
3, 4 - Collector
3X
3X
b1
Note
1.
Pulse test, t < 300s, duty cycle, d < 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXBT42N300HV
IXBH42N300HV
Fig. 1. Output Characteristics @ T
J
= 25ºC
90
80
70
60
10V
V
GE
= 25V
20V
15V
320
280
240
V
GE
= 25V
20V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
15V
I
C
- Amperes
I
C
-
Amperes
200
160
120
80
40
50
40
30
20
10
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
10V
5V
0
0
1
2
3
4
5
6
7
8
9
10
V
CE
- Volts
V
CE
- Volts
Fig. 3. Output Characteristics @ T
J
= 125ºC
90
80
70
V
GE
= 25V
20V
15V
1.8
V
GE
= 15V
1.6
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
V
CE(sat)
- Normalized
60
I
C
- Amperes
10V
1.4
I
C
= 84A
50
40
30
20
1.2
I
C
= 42A
1.0
I
C
= 21A
0.8
10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5V
0.6
-50
-25
0
25
50
75
100
125
150
V
CE
- Volts
T
J
- Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
5.5
5.0
4.5
140
4.0
3.5
3.0
42A
2.5
40
2.0
1.5
5
7
9
11
13
15
17
19
21
23
25
21A
20
0
4
4.5
5
5.5
I
C
= 84A
T
J
= 25ºC
200
180
160
Fig. 6. Input Admittance
T
J
= - 40ºC
25ºC
125ºC
I
C
-
Amperes
V
CE
- Volts
120
100
80
60
6
6.5
7
7.5
8
8.5
9
9.5
V
GE
- Volts
V
GE
- Volts
© 2014 IXYS CORPORATION, All Rights Reserved
IXBT42N300HV
IXBH42N300HV
80
70
60
25ºC
Fig. 7. Transconductance
T
J
= - 40ºC
140
120
Fig. 8. Forward Voltage Drop of Intrinsic Diode
100
T
J
= 25ºC
T
J
= 125ºC
g
f s
-
Siemens
I
F
- Amperes
180
200
50
125ºC
40
30
20
10
0
0
20
40
60
80
100
120
140
160
80
60
40
20
0
0
0.5
1
1.5
2
2.5
3
3.5
I
C
- Amperes
V
F
- Volts
Fig. 9. Gate Charge
16
14
12
V
CE
= 1000V
I
C
= 42A
I
G
= 10mA
10,000
Fig. 10. Capacitance
C ies
Capacitance - PicoFarads
V
GE
- Volts
10
8
6
4
2
0
0
20
40
60
80
100
120
140
160
180
200
1,000
C oes
100
Cres
f
= 1 MHz
10
0
5
10
15
20
25
30
35
40
Q
G
- NanoCoulombs
V
CE
- Volts
Fig. 11. Reverse-Bias Safe Operating Area
90
80
70
60
50
40
30
20
10
0
250
500
750
1000 1250
1500 1750
2000 2250
2500 2750
3000
T
J
= 125ºC
R
G
= 20Ω
dv / dt < 10V / ns
0.001
0.00001
0.1
1
Fig. 12. Maximum Transient Thermal Impedance
Z
(th)JC
- ºC / W
I
C
- Amperes
0.01
0.0001
0.001
0.01
0.1
1
10
V
CE
- Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBT42N300HV
IXBH42N300HV
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
650
600
550
R
G
= 20Ω , V
GE
= 15V
V
CE
= 1500V
650
600
550
T
J
= 125ºC
Fig. 14. Resistive Turn-on Rise Time vs.
Collector Current
t
r
- Nanoseconds
500
450
400
I
C
= 42A
350
300
250
25
35
45
55
65
75
85
95
105
115
125
I
C
= 84A
t
r
- Nanoseconds
500
450
400
350
300
250
40
R
G
= 20Ω , V
GE
= 15V
V
CE
= 1500V
T
J
= 25ºC
45
50
55
60
65
70
75
80
85
T
J
- Degrees Centigrade
I
C
- Amperes
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
1800
1600
1400
360
800
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
500
t
r
t
d(on)
- - - -
320
280
t
f
700
t
d(off)
- - - -
480
T
J
= 125ºC, V
GE
= 15V
V
CE
= 1500V
I
C
= 84A
R
G
= 20Ω, V
GE
= 15V
V
CE
= 1500V
t
d(off)
- Nanoseconds
t
r
- Nanoseconds
t
f
- Nanoseconds
600
I
C
= 42A
500
460
t
d(on)
- Nanoseconds
1200
1000
800
240
200
160
440
I
C
= 42A
600
400
200
20
40
60
80
100
120
140
160
120
80
40
180
400
420
300
I
C
= 84A
400
200
25
35
45
55
65
75
85
95
105
115
380
125
R
G
- Ohms
T
J
- Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times vs.
Collector Current
800
500
1100
1000
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
t
f
V
CE
= 1500V
I
C
= 42A
3600
3200
2800
t
f
700
V
CE
= 1500V
t
d(off)
- - - -
480
t
d(off
)
- - - -
R
G
= 20Ω, V
GE
= 15V
900
T
J
= 125ºC, V
GE
= 15V
t
d(off)
- Nanoseconds
t
d(off)
- Nanoseconds
t
f i
- Nanoseconds
t
f
- Nanoseconds
600
T
J
= 25ºC
500
460
800
700
600
500
400
2400
2000
1600
1200
800
440
400
T
J
= 125ºC
300
420
400
300
I
C
= 84A
400
0
180
200
40
45
50
55
60
65
70
75
80
85
380
200
20
40
60
80
100
120
140
160
I
C
- Amperes
R
G
- Ohms
© 2014 IXYS CORPORATION, All Rights Reserved
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