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NX138BKSX

Description
MOSFET 2 N-CH 60V 210MA 6TSSOP
Categorysemiconductor    Discrete semiconductor   
File Size752KB,15 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
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MOSFET 2 N-CH 60V 210MA 6TSSOP

NX138BKSX Parametric

Parameter NameAttribute value
FET type2 N-channel (dual)
FET functionstandard
Drain-source voltage (Vdss)60V
Current - Continuous Drain (Id) at 25°C210mA(Ta)
Rds On (maximum value) when different Id, Vgs3.5 ohms @ 200mA, 10V
Vgs (th) (maximum value) when different Id1.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)0.7nC @ 10V
Input capacitance (Ciss) at different Vds (maximum value)20pF @ 30V
Power - Max320mW
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Package/casing6-TSSOP,SC-88,SOT-363
Supplier device packaging6-TSSOP
NX138BKS
15 June 2016
60 V, dual N-channel Trench MOSFET
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Low threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Per transistor
V
DS
V
GS
I
D
R
DSon
[1]
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
Conditions
T
j
= 25 °C
V
GS
= 10 V; T
amb
= 25 °C
V
GS
= 10 V; I
D
= 200 mA; T
j
= 25 °C
[1]
Min
-
-20
-
-
Typ
-
-
-
2.1
Max
60
20
210
3.5
2
Unit
V
V
mA
Ω
Static characteristics (per transistor)
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