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CMPT2907AE TR

Description
TRANS PNP 60V 0.6A SOT-23
Categorysemiconductor    Discrete semiconductor   
File Size400KB,3 Pages
ManufacturerCentral Semiconductor
Environmental Compliance
Download Datasheet Parametric View All

CMPT2907AE TR Overview

TRANS PNP 60V 0.6A SOT-23

CMPT2907AE TR Parametric

Parameter NameAttribute value
Transistor typePNP
Current - Collector (Ic) (Maximum)600mA
Voltage - collector-emitter breakdown (maximum)60V
Vce saturation value (maximum value) when different Ib,Ic700mV @ 50mA,500mA
Current - collector cutoff (maximum)10nA(ICBO)
DC current gain (hFE) at different Ic, Vce (minimum value)100 @ 150mA,10V
Power - Max350mW
Frequency - Transition200MHz
Operating temperature-65°C ~ 150°C(TJ)
Installation typesurface mount
Package/casingTO-236-3,SC-59,SOT-23-3
Supplier device packagingSOT-23
CMPT2907AE
ENHANCED SPECIFICATION
SURFACE MOUNT
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT2907AE
is an Enhanced version of the CMPT2907A PNP
Switching transistor in a SOT-23 surface mount
package, designed for switching applications, interface
circuit and driver circuit applications.
MARKING CODE: C2FE
FEATURED ENHANCED SPECIFICATIONS:
SOT-23 CASE
BVCBO from 60V min to 90V min. (115V TYP)
VCE(SAT) from 1.6V max to 0.7V max. (0.280V TYP)
hFE from 50 min to 75 min. (110 TYP)
Collector-Base Voltage
MAXIMUM RATINGS:
(TA=25°C)
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
90
60
5.0
600
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
VCB=50V
ICBO
VCB=50V, TA=125°C
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
fT
Cob
Cib
MAX
10
10
50
UNITS
nA
µA
nA
V
V
V
V
V
V
V
VCE=30V, VEB=0.5V
IC=10µA
IC=10mA
IE=10µA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=0.1mA
VCE=10V, IC=1.0mA
VCE=10V,
VCE=10V,
VCE=10V,
VCE=20V,
IC=10mA
IC=150mA
IC=500mA
IC=50mA, f=100MHz
90
60
5.0
115
0.103
0.280
0.2
0.7
1.3
2.6
100
100
100
100
75
200
205
300
110
MHz
8.0
30
pF
pF
VCB=10V, IE=0, f=1.0MHz
VBE=2.0V, IC=0, f=1.0MHz
Enhanced specification
R2 (1-February 2010)

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