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BD136 / BD138 / BD140 — PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CBO
Collector-Base Voltage
Parameter
BD136
BD138
BD140
BD136
Value
-45
-60
-80
-45
-60
-80
-5
-1.5
-3.0
-0.5
T
C
= 25°C
T
A
= 25°C
12.5
1.25
150
-55 to +150
Unit
V
V
CEO
V
EBO
I
C
I
C
I
B
P
C
T
J
T
STG
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
BD138
BD140
V
V
A
A
A
W
°C
°C
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
Parameter
BD136
Conditions
BD138 I
C
= -30 mA, I
B
= 0
BD140
V
CB
= -30 V, I
E
= 0
V
EB
= -5 V, I
C
= 0
V
CE
= -2 V, I
C
= -5 mA
V
CE
= -2 V, I
C
= -0.5 A
V
CE
= -2 V, I
C
= -150 mA
V
CE
= -2 V, I
C
= -0.5 A
Min.
-45
-60
-80
Typ.
Max.
Unit
V
Collector-Emitter Sustaining
V
CEO
(sus)
Voltage
(1)
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE
(sat)
V
BE
(on)
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
DC Current Gain
(1)
(1)
-0.1
-10
25
25
40
250
-0.5
-1
μA
μA
DC Current Gain
(1)
Base-Emitter On Voltage
(1)
Collector-Emitter Saturation Voltage
(1)
I
C
= -500 mA, I
B
= -50 mA
V
V
Note:
1. Pulse test: pulse width = 350
μs,
duty cycle = 2.0% pulsed.
h
FE
Classification
Classification
h
FE3
10
63 ~ 160
16
100 ~ 250
© 2000 Fairchild Semiconductor Corporation
BD136 / BD138 / BD140 Rev. 2.2
www.fairchildsemi.com
2
BD136 / BD138 / BD140 — PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
100
90
80
V
CE
(sat)[mV], SATURATION VOLTAGE
V
CE
= -2V
-500
-450
-400
-350
-300
-250
-200
-150
-100
-50
-0
-1E-3
h
FE
, DC CURRENT GAIN
70
60
50
40
30
20
10
0
-10
I
C
= 20 I
B
-0.01
-0.1
-1
I
C
= 10
I
B
-100
-1000
-10
I
C
[mA], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Collector-Emitter Saturation Voltage
-1.1
-10
V
BE
[V], BASE-EMITTER VOLTAGE
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
-1E-3
-0.01
BE
I
C
[A], COLLECTOR CURRENT
t)
( sa I
B
V
10
I
C
=
)
( on
V
BE
= -5V
CE
V
I
C
MAX. (Pulsed)
I
C
MAX. (Continuous)
1ms
-1
10us
s
0u
10
DC
-0.1
BD140
BD136
BD138
-0.01
-0.1
-1
-10
-1
-10
-100
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Voltage
Figure 4. Safe Operating Area
20.0
17.5
P
C
[W], POWER DISSIPATION
15.0
12.5
10.0
7.5
5.0
2.5
0.0
0
25
50
o
75
100
125
150
175
T
C
[ C], CASE TEMPERATURE
Figure 5. Power Derating
© 2000 Fairchild Semiconductor Corporation
BD136 / BD138 / BD140 Rev. 2.2
www.fairchildsemi.com
3
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