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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
BCV28; BCV48
PNP Darlington transistors
Product data sheet
Supersedes data of 1999 Apr 08
2004 Dec 06
NXP Semiconductors
Product data sheet
PNP Darlington transistors
FEATURES
•
Very high DC current gain (min. 10 000)
•
High current (max. 500 mA)
•
Low voltage (max. 60 V).
APPLICATIONS
•
Where very high amplification is required.
PINNING
PIN
1
2
3
emitter
collector
base
BCV28; BCV48
DESCRIPTION
3
2
DESCRIPTION
PNP Darlington transistor in a SOT89 plastic package.
NPN complements: BCV29 and BCV49.
MARKING
TYPE NUMBER
BCV28
BCV48
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BCV28
BCV48
SC-62
DESCRIPTION
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
VERSION
SOT89
MARKING CODE
ED
EE
TR1
TR2
3
2
1
1
sym088
Fig.1 Simplified outline (SOT89) and symbol.
2004 Dec 06
2
NXP Semiconductors
Product data sheet
PNP Darlington transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
BCV28
BCV48
V
CES
collector-emitter voltage
BCV28
BCV48
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
Note
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
ambient temperature
T
amb
≤
25
°C;
note 1
open collector
V
BE
= 0 V
−
−
−
−
−
−
−
−65
−
−65
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
BCV28; BCV48
MIN.
MAX.
−40
−80
−30
−60
−10
−500
−800
−100
1.3
+150
150
+150
V
V
V
V
V
UNIT
mA
mA
mA
W
°C
°C
°C
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
R
th(j-s)
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
VALUE
96
16
UNIT
K/W
K/W
2004 Dec 06
3
NXP Semiconductors
Product data sheet
PNP Darlington transistors
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
BCV28
BCV48
I
EBO
h
FE
emitter-base cut-off current
DC current gain
BCV28
BCV48
DC current gain
BCV28
BCV48
DC current gain
BCV28
BCV48
DC current gain
BCV28
BCV48
V
CEsat
V
BEsat
V
BEon
f
T
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter on-state voltage
transition frequency
I
C
=
−100
mA; I
B
=
−0.1
mA
I
C
=
−100
mA; I
B
=
−0.1
mA
I
C
=
−10
mA; I
B
=
−5
mA
I
C
=
−30
mA; V
CE
=
−5
V;
f = 100 MHz
I
C
=
−500
mA; V
CE
=
−5
V; see Fig.2
I
C
=
−100
mA; V
CE
=
−5
V; see Fig.2
I
C
=
−10
mA; V
CE
=
−5
V; see Fig.2
PARAMETER
collector-base cut-off current
I
E
= 0 A; V
CB
=
−30
V
I
E
= 0 A; V
CB
=
−60
V
I
C
= 0 A; V
BE
=
−10
V
I
C
=
−1
mA; V
CE
=
−5
V; see Fig.2
−
−
−
CONDITIONS
BCV28; BCV48
MIN.
TYP.
−
−
−
−
−
MAX. UNIT
−100
−100
−100
−
−
−
−
−
−
−
−
−1
−1.5
−1.4
−
V
V
V
MHz
nA
nA
nA
4 000
2 000
10 000
−
4 000
−
20 000
−
10 000
−
4 000
2 000
−
−
−
−
−
−
−
−
−
220
2004 Dec 06
4
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