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2SC5632G0L

Description
TRANS NPN 8VCEO 50MA SMINI-3
Categorysemiconductor    Discrete semiconductor   
File Size279KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric View All

2SC5632G0L Overview

TRANS NPN 8VCEO 50MA SMINI-3

2SC5632G0L Parametric

Parameter NameAttribute value
Transistor typeNPN
Voltage - collector-emitter breakdown (maximum)8V
Frequency - Transition1.1GHz
Noise figure (dB, typical values ​​at different f)-
Gain-
Power - Max150mW
DC current gain (hFE) at different Ic, Vce (minimum value)100 @ 2mA,4V
Current - Collector (Ic) (Maximum)50mA
Operating temperature150°C(TJ)
Installation typesurface mount
Package/casingSC-85
Supplier device packagingS mini 3-F2
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC5632G
Silicon NPN epitaxial planar type
For high-frequency amplification and switching
Features
High transition frequency f
T
S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing
Package
Code
SMini3-F2
Marking Symbol: 2R
Pin Name
1: Base
2: Emitter
3: Collector
Th an
W is k y
Th e a pro ou
Fo an po du fo
r f k y log ct r b
ur o iz is ro
th u e n w
er fo fo ot sin
in r y r a av g
fo ou n a o
rm r y ila ur
at pa tro ble da
io tie ub f ta
n, n le or s
pl ce th th he
ea .
is e ets
se
m ren .
ay e
co
ha wa
nt
ac
ve l o
to
ca f ou
ur
us r p
sa
ed ro
le
yo du
s
of
u. ct
fic
lin
es
eu
.
p.
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
C
V
EBO
P
C
T
j
Collector-base voltage (Emitter open)
Rating
15
8
3
Unit
V
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
V
V
50
mA
°C
Collector power dissipation
Junction temperature
Storage temperature
150
150
mW
°C
T
stg
−55
to
+150
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Symbol
V
CBO
I
EBO
h
FE
Collector-base voltage (Emitter open)
Conditions
Min
15
Typ
Max
Unit
V
µA
V
GHz
pF
I
C
=
100
µA,
I
E
=
0
V
EB
=
2 V, I
C
=
0
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
h
FE
ratio
*
2
V
CE
=
4 V, I
C
=
2 mA
100
0.6
350
1.5
∆h
FE
h
FE2
: V
CE
=
4 V, I
C
=
100
µA
h
FE1
: V
CE
=
4 V, I
C
=
2 mA
I
C
=
20 mA, I
B
=
4 mA
Th
Collector-emitter saturation voltage
Transition frequency
V
CE(sat)
f
T
C
ob
0.1
V
CE
=
5 V, I
C
=
15 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
0.6
1.1
Collector output capacitance
(Common base, input open circuited)
1.0
1.6
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *:
∆h
FE
=
h
FE2
/ h
FE1
Publication date: June 2007
SJC00369AED
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