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MMDT5551-TP

Description
TRANS 2NPN 160V 0.2A SOT363
Categorysemiconductor    Discrete semiconductor   
File Size242KB,2 Pages
ManufacturerMicro Commercial Co
Environmental Compliance
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MMDT5551-TP Overview

TRANS 2NPN 160V 0.2A SOT363

MMDT5551-TP Parametric

Parameter NameAttribute value
Transistor type2 NPN (double)
Current - Collector (Ic) (Maximum)200mA
Voltage - collector-emitter breakdown (maximum)160V
Vce saturation value (maximum value) when different Ib,Ic150mV @ 1mA,10mA
Current - collector cutoff (maximum)50nA(ICBO)
DC current gain (hFE) at different Ic, Vce (minimum value)80 @ 10mA,5V
Power - Max200mW
Frequency - Transition300MHz
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Package/casing6-TSSOP,SC-88,SOT-363
Supplier device packagingSOT-363
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
MMDT5551
·
Features
Halogen
free available upon request by adding suffix "-HF"
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Capable of 200mWatts of Power Dissipation
Ideal for Medium Power Amplification and
Switching
Operating and Storage Junction Temperatures: -55 to 150
Marking:K4N
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=1 mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=100µA, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=10µAdc, I
C
=0)
Emitter Cutoff Current
(V
EB
=4Vdc, I
C
=0)
Collect Cutoff Current
(V
CB
=120Vdc, I
E
=0)
Collector Current-Continuous
Thermal Resistance, Junction to Ambient
Min
160
180
6.0
50
50
200
625
Max
Units
Vdc
Vdc
Vdc
nAdc
nAdc
mA
K/W
Plastic-Encapsulate
Transistors
SOT-363
G
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
EBO
I
CBO
I
C
R
qJA
B
C
A
H
M
J
ON CHARACTERISTICS
h
FE
DC Current Gain*
(I
C
=1mAdc, V
CE
=5.0Vdc)
(I
C
=10mAdc, V
CE
=5.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=10mAdc, I
B
=1.0mAdc)
Base-Emitter Saturation Voltage
(I
C
=10mAdc, I
B
=1.0mAdc)
Current Gain-Bandwidth Product
(I
C
=10mAdc, V
CE
=20Vdc, f=100MHz)
Output Capacitance
(V
CB
=5.0Vdec, I
E
=0, f=1.0MHz)
Rg=1kohm
V
CE
=5.0Vdec, IC=200µA, f=1.0KHz
80
100
300
0.15
1.0
Vdc
Vdc
K
D
L
V
CE(sat)
V
BE(sat)
SMALL-SIGNAL CHARACTERISTICS
f
T
C
obo
100
300
6.0
8.0
MHz
pF
NF
DIM
A
B
C
D
G
H
J
K
L
M
DIMENSIONS
Noise figure
INCHES
MIN
MAX
.006
.014
.045
.053
.085
.096
.026
.047
.055
.071
.087
---
.004
.035
.043
.010
.018
.003
.006
MM
MIN
MAX
0.15
0.35
1.15
1.35
2.15
2.45
0.65Nominal
1.20
1.40
1.80
2.20
---
0.10
0.90
1.10
0.26
0.46
0.08
0.15
NOTE
www.mccsemi.com
Revision:
C
1 of 2
2013/12/09
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