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MT46H128M16LFCK-5 IT:A

Description
IC DRAM 2G PARALLEL 60VFBGA
Categorystorage   
File Size3MB,106 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

MT46H128M16LFCK-5 IT:A Overview

IC DRAM 2G PARALLEL 60VFBGA

MT46H128M16LFCK-5 IT:A Parametric

Parameter NameAttribute value
memory typeVolatile
memory formatDRAM
technologySDRAM - Mobile LPDDR
storage2Gb (128M x 16)
Clock frequency200MHz
Write cycle time - words, pages15ns
interview time5ns
memory interfacein parallel
Voltage - Power1.7 V ~ 1.95 V
Operating temperature-40°C ~ 85°C(TA)
Installation typesurface mount
Package/casing60-VFBGA
Supplier device packaging60-VFBGA(10x11.5)
2Gb: x16, x32 Mobile LPDDR SDRAM
Features
Mobile Low-Power DDR SDRAM
MT46H128M16LF – 32 Meg x 16 x 4 Banks
MT46H64M32LF – 16 Meg x 32 x 4 Banks
MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2
MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4
MT46H256M32R4 – 32 Meg x 16 x 4 Banks x 4
Features
V
DD
/V
DDQ
= 1.70–1.95V
Bidirectional data strobe per byte of data (DQS)
Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
Differential clock inputs (CK and CK#)
Commands entered on each positive CK edge
DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
4 internal banks for concurrent operation
Data masks (DM) for masking write data; one mask
per byte
Programmable burst lengths (BL): 2, 4, 8, or 16
Concurrent auto precharge option is supported
Auto refresh and self refresh modes
1.8V LVCMOS-compatible inputs
Temperature-compensated self refresh (TCSR)
Partial-array self refresh (PASR)
Deep power-down (DPD)
Status read register (SRR)
Selectable output drive strength (DS)
Clock stop capability
64ms refresh; 32ms for the automotive temperature
range
Table 1: Key Timing Parameters (CL = 3)
Speed Grade
-5
-54
-6
-75
Clock Rate
200 MHz
185 MHz
166 MHz
133 MHz
Access Time
5.0ns
5.0ns
5.0ns
6.0ns
Options
V
DD
/V
DDQ
1.8V/1.8V
Configuration
128 Meg x 16 (32 Meg x 16 x 4 banks)
64 Meg x 32 (16 Meg x 32 x 4 banks)
Addressing
JEDEC-standard
Reduced page-size
1
4-die stack reduced page-size
2
2-die stack standard
4-die stack standard
Plastic "green" package
60-ball VFBGA (10mm x 11.5mm)
3
90-ball VFBGA (10mm x 13mm)
4
PoP (plastic "green" package)
168-ball VFBGA (12mm x 12mm)
4
168-ball WFBGA (12mm x 12mm)
4
168-ball WFBGA (12mm x 12mm)
4
240-ball WFBGA (14mm x 14mm)
4
Timing – cycle time
5ns @ CL = 3 (200 MHz)
5.4ns @ CL = 3 (185 MHz)
6ns @ CL = 3 (166 MHz)
7.5ns @ CL = 3 (133 MHz)
Power
Standard I
DD2
/I
DD6
Operating temperature range
Commercial (0˚ to +70˚C)
Industrial (–40˚C to +85˚C)
Automotive (–40˚C to +105˚C)
1
Design revision
Notes:
1.
2.
3.
4.
Marking
H
128M16
64M32
LF
LG
R4
L2
L4
CK
CM
JV
KQ
MA
MC
-5
-54
-6
-75
None
None
IT
AT
:A
Contact factory for availability.
Available in the 168-ball JV package only.
Available only for x16 configuration.
Available only for x32 configuration.
PDF: 09005aef83a73286
2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2009 Micron Technology, Inc. All rights reserved.

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