IC DRAM 512M PARALLEL 84FBGA
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | Micron Technology |
| Parts packaging code | BGA |
| package instruction | TFBGA, BGA84,9X15,32 |
| Contacts | 84 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| access mode | FOUR BANK PAGE BURST |
| Maximum access time | 0.35 ns |
| Other features | AUTO/SELF REFRESH |
| Maximum clock frequency (fCLK) | 533 MHz |
| I/O type | COMMON |
| interleaved burst length | 4,8 |
| JESD-30 code | R-PBGA-B84 |
| JESD-609 code | e1 |
| length | 12.5 mm |
| memory density | 536870912 bit |
| Memory IC Type | DDR DRAM |
| memory width | 16 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 84 |
| word count | 33554432 words |
| character code | 32000000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 85 °C |
| Minimum operating temperature | |
| organize | 32MX16 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | TFBGA |
| Encapsulate equivalent code | BGA84,9X15,32 |
| Package shape | RECTANGULAR |
| Package form | GRID ARRAY, THIN PROFILE, FINE PITCH |
| Peak Reflow Temperature (Celsius) | 260 |
| power supply | 1.8 V |
| Certification status | Not Qualified |
| refresh cycle | 8192 |
| Maximum seat height | 1.2 mm |
| self refresh | YES |
| Continuous burst length | 4,8 |
| Maximum standby current | 0.007 A |
| Maximum supply voltage (Vsup) | 1.9 V |
| Minimum supply voltage (Vsup) | 1.7 V |
| Nominal supply voltage (Vsup) | 1.8 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | OTHER |
| Terminal surface | Tin/Silver/Copper (Sn/Ag/Cu) |
| Terminal form | BALL |
| Terminal pitch | 0.8 mm |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | 30 |
| width | 8 mm |
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