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BLF7G10LS-250,118

Description
RF FET LDMOS 65V 19.5DB SOT502B
Categorysemiconductor    Discrete semiconductor   
File Size987KB,13 Pages
ManufacturerAmphenol
Websitehttp://www.amphenol.com/
Environmental Compliance
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BLF7G10LS-250,118 Overview

RF FET LDMOS 65V 19.5DB SOT502B

BLF7G10LS-250,118 Parametric

Parameter NameAttribute value
Transistor typeLDMOS
frequency920MHz ~ 960MHz
Gain19.5dB
Voltage - Test30V
Rated current-
Noise Figure-
Current - Test1.8A
Power - output60W
Voltage - Rated65V
Package/casingSOT-502B
Supplier device packagingSOT502B
BLF7G10L-250;
BLF7G10LS-250
Power LDMOS transistor
Rev. 6 — 7 November 2016
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor for base station applications at frequencies from
869 MHz to 960 MHz.
Table 1.
Typical performance
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing = 5 MHz. Typical RF performance at T
case
= 25
C.
Test signal
2-carrier W-CDMA
2-carrier W-CDMA
[1]
[2]
f
(MHz)
869 to 894
[1]
920 to 960
[2]
I
Dq
(mA)
1800
1800
V
DS
(V)
30
30
P
L(AV)
(W)
60
60
G
p
(dB)
19.5
19.5
D
(%)
27.4
30.5
ACPR
(dBc)
35.6
34
In a common source class-AB application test circuit.
In a common source class-AB production test circuit.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Designed for broadband operation (869 MHz to 960 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use (input and output)
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
869 MHz to 960 MHz frequency range

BLF7G10LS-250,118 Related Products

BLF7G10LS-250,118 BLF7G10L-250,112 BLF7G10L-250,118
Description RF FET LDMOS 65V 19.5DB SOT502B RF FET LDMOS 65V 19.5DB SOT502A RF FET LDMOS 65V 19.5DB SOT502A
Transistor type LDMOS LDMOS LDMOS
frequency 920MHz ~ 960MHz 920MHz ~ 960MHz 920MHz ~ 960MHz
Gain 19.5dB 19.5dB 19.5dB
Voltage - Test 30V 30V 30V
Current - Test 1.8A 1.8A 1.8A
Power - output 60W 60W 60W
Voltage - Rated 65V 65V 65V
Package/casing SOT-502B SOT-502A SOT-502A
Supplier device packaging SOT502B LDMOST LDMOST
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