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TCR3DM285,LF

Description
IC REG LINEAR 2.85V 300MA 4DFN
Categorysemiconductor    Power management   
File Size455KB,14 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric View All

TCR3DM285,LF Overview

IC REG LINEAR 2.85V 300MA 4DFN

TCR3DM285,LF Parametric

Parameter NameAttribute value
Output configurationjust
Output typefixed
Number of voltage regulators1
Voltage - input (maximum)5.5V
Voltage - Output (minimum/fixed)2.85V
Voltage - Output (maximum)-
Pressure drop (maximum)0.25V @ 300mA
Current - Output300mA
Current - static (Iq)65µA
Current - Power (maximum)78µA
PSRR70dB(1kHz)
Control characteristicsEnable
Protective functionOvercurrent, overtemperature
Operating temperature-40°C ~ 85°C
Installation typesurface mount
Package/casing4-UDFN Exposed Pad
Supplier device packaging4-DFN(1x1)
TCR3DM series
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TCR3DM series
300 mA CMOS Low Drop-Out Regulator with inrush current protection circuit
The TCR3DM series are CMOS general-purpose single-output
voltage regulators with an on/off control input, featuring low dropout
voltage, low output noise voltage and low inrush current.
These voltage regulators are available in fixed output voltages
between 1.0 V and 4.5 V and capable of driving up to 300 mA.
They feature over-current protection, over-temperature protection,
Inrush current protection circuit and Auto-discharge function.
The TCR3DM series are offered in the ultra small plastic mold
package DFN4 (1.0 mm x 1.0 mm; t 0.58 mm). It has a low dropout
voltage of 210 mV (2.5 V output, I
OUT
= 300 mA) with low output
BOTTOM VIEW ILLUSTRATION
noise voltage of 38
μV
rms
(2.5 V output) and a load transient
DFN4
response of only
ΔV
OUT
= ±80 mV ( I
OUT
= 1 mA⇔300 mA, C
OUT
Weight : 1.3 mg ( typ.)
=1.0
μF).
As small ceramic input and output capacitors can be used with the
TCR3DM series, these devices are ideal for portable applications that require high-density board assembly such as
cellular phones.
Features
Low Drop-Out voltage
V
IN
-V
OUT
= 210 mV (typ.) at 2.5 V-output, I
OUT
= 300 mA
V
IN
-V
OUT
= 270 mV (typ.) at 1.8 V-output, I
OUT
= 300 mA
V
IN
-V
OUT
= 490 mV (typ.) at 1.2 V-output, I
OUT
= 300 mA
Low output noise voltage
V
NO
= 38
μV
rms
(typ.) at 2.5 V-output, I
OUT
= 10 mA, 10 Hz
f
100 kHz
Fast load transient response (ΔV
OUT
= ±80 mV (typ.) at I
OUT
= 1 mA⇔ 300 mA, C
OUT
=1.0
μF
)
High ripple rejection ( R.R = 70 dB (typ.) at 2.5V-output, I
OUT
= 10 mA, f =1kHz )
Over-current protection
Over-temperature protection
Inrush current protection circuit
Auto-discharge function
Pull down connection between CONTROL and GND
Ceramic capacitors can be used ( C
IN
= 1.0μF, C
OUT
=1.0
μF
)
Ultra small package DFN4 (1.0 mm x 1.0 mm ; t 0.58 mm )
Start of commercial production
2013-03
1
2017-06-20

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