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BZX384-B3V0,115

Description
DIODE ZENER 3V 300MW SOD323
CategoryDiscrete semiconductor    diode   
File Size993KB,13 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric View All

BZX384-B3V0,115 Overview

DIODE ZENER 3V 300MW SOD323

BZX384-B3V0,115 Parametric

Parameter NameAttribute value
Brand NameNexperia
MakerNexperia
Parts packaging codeSOD
package instructionR-PDSO-G2
Contacts2
Manufacturer packaging codeSOD323
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time4 weeks
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeR-PDSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation0.3 W
Certification statusNot Qualified
Nominal reference voltage3 V
surface mountYES
technologyZENER
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Maximum voltage tolerance2%
Working test current5 mA
BZX384 series
Voltage regulator diodes
Rev. 3 — 11 October 2016
Product data sheet
1. Product profile
1.1 General description
Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted
Device (SMD) plastic package.
The diodes are available in the normalized E24
2
% (BZX384-B) and approximately
5
% (BZX384-C) tolerance range. The series includes 37 breakdown voltages with
nominal working voltages from 2.4 V to 75 V.
1.2 Features and benefits
Total power dissipation:
300 mW
Two tolerance series:
2
% and
approximately
5
%
AEC-Q101 qualified
Working voltage range:
nominal 2.4 V to 75 V (E24 range)
Non-repetitive peak reverse power
dissipation:
40 W
1.3 Applications
General regulation functions
1.4 Quick reference data
Table 1.
Symbol
V
F
P
tot
[1]
[2]
Quick reference data
Parameter
forward voltage
total power dissipation
Conditions
I
F
= 10 mA
T
amb
25 °C
[1]
[2]
Min
-
-
Typ
-
-
Max
0.9
300
Unit
V
mW
Pulse test: t
p
100
s;  
0.02
Device mounted on a FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
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