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SO
T2
BCP53T series
80 V, 1 A PNP medium power transistors
Rev. 1 — 5 July 2016
Product data sheet
1. Product profile
1.1 General description
PNP medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted
Device (SMD) plastic package.
Table 1.
Product overview
Package
NXP
BCP53T
BCP53-10T
BCP53-16T
SOT223
JEITA
SC-73
JEDEC
-
BCP56T
BCP56-10T
BCP56-16T
NPN complement
23
Type number
1.2 Features and benefits
High collector current capability I
C
and I
CM
Three current gain selections
High power dissipation capability
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators
MOSFET drivers
High-side switches
Power management
Amplifiers
1.4 Quick reference data
Table 2.
Quick reference data
T
amb
= 25
C unless otherwise specified.
Symbol
V
CEO
I
C
I
CM
Parameter
collector-emitter voltage
collector current
peak collector current
single pulse; t
p
1 ms
Conditions
open base
Min
-
-
-
Typ
-
-
-
Max
80
1
2
Unit
V
A
A
NXP Semiconductors
BCP53T series
80 V, 1 A PNP medium power transistors
Table 2.
Quick reference data
…continued
T
amb
= 25
C unless otherwise specified.
Symbol
h
FE
Parameter
DC current gain
BCP53-10T
BCP53-16T
[1]
Pulse test: t
p
300
s;
= 0.02
Conditions
V
CE
=
2
V; I
C
=
150
mA
V
CE
=
2
V; I
C
=
150
mA
V
CE
=
2
V; I
C
=
150
mA
[1]
[1]
[1]
Min
63
63
100
Typ
-
-
-
Max
250
160
250
Unit
2. Pinning information
Table 3.
Pin
1
2
3
4
Pinning
Symbol
B
C
E
C
Description
base
collector
emitter
collector
1
2
3
4
B
E
sym132
Simplified outline
Graphic symbol
C
3. Ordering information
Table 4.
Ordering information
Package
Name
BCP53T
BCP53-10T
BCP53-16T
SC-73
Description
plastic surface-mounted package with increased
heatsink; 4 leads
Version
SOT223
Type number
4. Marking
Table 5.
BCP53T
BCP53-10T
BCP53-16T
Marking codes
Marking code
BCP53T
P5310T
P5316T
Type number
BCP53T_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet
Rev. 1 — 5 July 2016
2 of 16
NXP Semiconductors
BCP53T series
80 V, 1 A PNP medium power transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
peak base current
total power dissipation
single pulse;
t
p
1 ms
T
amb
25
C
[1]
[2]
[3]
[4]
[5]
Conditions
open emitter
open base
open collector
single pulse;
t
p
1 ms
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
55
65
Max
100
80
5
1
2
0.2
0.3
0.6
1
1.3
1.3
1.8
+150
+150
+150
Unit
V
V
V
A
A
A
A
W
W
W
W
W
C
C
C
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
[5]
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 1 cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 6 cm
2
.
Device mounted on an FR4 PCB, 4-layer copper; tin-plated and standard footprint.
Device mounted on an FR4 PCB, 4-layer copper; tin-plated; mounting pad for collector 1 cm
2
.
BCP53T_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet
Rev. 1 — 5 July 2016
3 of 16
NXP Semiconductors
BCP53T series
80 V, 1 A PNP medium power transistors
2
P
tot
(W)
1.6
(2), (3)
(1)
aaa-023487
1.2
(4)
0.8
(5)
0.4
0
-75
-25
25
75
125
175
T
amb
(°C)
(1) FR4 PCB, 4-layer copper, 1 cm
2
(2) FR4 PCB, single-sided copper, 6 cm
2
(3) FR4 PCB, 4-layer copper, standard footprint
(4) FR4 PCB, single-sided copper, 1 cm
2
(5) FR4 PCB, single-sided copper, standard footprint
Fig 1.
-10
I
C
(A)
-1
Power derating curves
aaa-023488
t
p
= 10 µs
100 µs
-10
-1
DC
DC; FR4 PCB, 4-layer copper;
collector mounting pad 1 cm
2
1 ms
10 ms
100 ms
1s
-10
-2
-10
-3
-10
-1
-1
-10
-10
2
V
CE
(V)
-10
3
Unless otherwise specified:
T
amb
= 25
C
Single pulse
FR4 PCB, single-sided copper; standard footprint
Fig 2.
Safe operating area; junction to ambient; continuous and peak collector currents as a function of
collector-emitter voltage
BCP53T_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet
Rev. 1 — 5 July 2016
4 of 16
Power technology
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