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MSMP8.0A-M3/89A

Description
TVS DIODE 8VWM 13.6VC MICROSMP
CategoryCircuit protection   
File Size98KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

MSMP8.0A-M3/89A Overview

TVS DIODE 8VWM 13.6VC MICROSMP

MSMP8.0A-M3/89A Parametric

Parameter NameAttribute value
typeZina
One way channel1
Voltage - Reverse OFF (Typical)8V
Voltage - Breakdown (minimum)8.89V
电压 - 箝位(最大值)@ Ipp13.6V
Current - Peak Pulse (10/1000µs)11A
Power - Peak Pulse150W
Power line protectionnone
applicationUniversal
Capacitance at different frequencies-
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Package/casingMicroSMP
Supplier device packagingMicroSMP
MSMP6.0A thru MSMP20A
www.vishay.com
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
eSMP Series
®
• Very low profile - typical height of 0.65 mm
• Ideal for automated placement
• Oxide planar chip junction
• Uni-directional polarity only
• Peak pulse power: 150 W (10/1000 μs)
• ESD capability:
15 kV (air), 8 kV (contact)
• Meets MSL level 1, per J-STD-020C, LF maximum peak of
260 °C
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
Top View
Bottom View
MicroSMP
PRIMARY CHARACTERISTICS
V
BR
V
WM
P
PPM
(10 x 1000 μs)
T
J
max.
Polarity
Package
6.67 V to 24.5 V
6.0 V to 20 V
150 W
150 °C
Uni-directional
MicroSMP
MECHANICAL DATA
Case:
MicroSMP
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity:
Color band denotes the cathode end
per
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for protecting
sensitive equipment against transient overvoltages.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak power dissipation with a 10/1000 μs waveform (fig. 1)
Peak pulse current with a 10/1000 μs waveform
Power dissipation
Power dissipation
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 1
(2)
Mounted on 6.0 mm x 6.0 mm copper pads to each terminal
(3)
Mounted on minimum recommended pad layout
T
M
= 120 °C
T
A
= 25 °C
SYMBOL
P
PPM (1)(2)
I
PPM (1)
P
D (2)
P
D (3)
T
J
, T
STG
VALUE
150
See next table
1.0
W
0.5
- 55 to + 150
°C
UNIT
W
A
Revision: 10-Dec-13
Document Number: 89457
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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