BCM857QAS
24 April 2018
45 V, 100 mA PNP/PNP matched double transistors
Product data sheet
1. General description
PNP/PNP matched double transistors in an ultra small DFN1010B-6 (SOT1216) leadless Surface-
Mounted Device (SMD) plastic package.
NPN/NPN complement: BCM847QAS
2. Features and benefits
•
•
•
•
•
•
•
Reduces component count
Reduces pick and place costs
Low package height of 0.37 mm
Current gain matching
Base-emitter voltage matching
Application-optimized pinout
AEC-Q101 qualified
3. Applications
•
•
Current mirror
Differential amplifier
4. Quick reference data
Table 1. Quick reference data
Symbol
Per transistor
V
CEO
I
C
I
CM
h
FE
Per device
h
FE1
/h
FE2
V
BE1
−V
BE2
[1]
Parameter
collector-emitter
voltage
collector current
peak collector current
DC current gain
DC current gain
matching
base-emitter voltage
matching
Conditions
open base
Min
-
-
Typ
-
-
-
290
1
-
Max
-45
-100
-200
450
1.05
2
Unit
V
mA
mA
t
p
≤ 1 ms; single pulse
V
CE
= -5 V; I
C
= -2 mA; T
amb
= 25 °C
V
CE
= -5 V; I
C
= -2 mA; T
amb
= 25 °C
[1]
-
200
0.95
-
mV
The smaller of the two values is subtracted from the larger value.
Nexperia
BCM857QAS
45 V, 100 mA PNP/PNP matched double transistors
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
4
5
6
7
8
Symbol Description
E1
B1
C2
E2
B2
C1
C1
C2
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
collector TR1
collector TR2
3
1
2
8
7
6
5
4
Simplified outline
Graphic symbol
6
5
4
TR2
TR1
1
2
sym018
3
Transparent top view
DFN1010B-6 (SOT1216)
6. Ordering information
Table 3. Ordering information
Type number
BCM857QAS
Package
Name
DFN1010B-6
Description
DFN1010B-6: plastic thermal enhanced ultra thin small outline
package; no leads; 6 terminals
Version
SOT1216
7. Marking
Table 4. Marking codes
Type number
BCM857QAS
READING
DIRECTION
Marking code
C 011
MARKING CODE
(EXAMPLE)
MARK-FREE AREA
PIN 1
INDICATION MARK
READING EXAMPLE:
A 110
VENDOR CODE
aaa-019766
YEAR DATE CODE
Fig. 1.
DFN1010B-6 (SOT1216) binary marking code description
BCM857QAS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
24 April 2018
2 / 11
Nexperia
BCM857QAS
45 V, 100 mA PNP/PNP matched double transistors
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per transistor
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
Per device
P
tot
T
j
T
amb
T
stg
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
open emitter
open base
open collector
t
p
≤ 1 ms; single pulse
T
amb
≤ 25 °C
T
amb
≤ 25 °C
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-55
-65
Max
-50
-45
-6
-100
-200
-100
230
350
150
150
150
Unit
V
V
V
mA
mA
mA
mW
mW
°C
°C
°C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
400
P
tot
(mW)
300
aaa-007377
200
100
0
-75
-25
25
75
125
175
T
amb
(°C)
FR4 PCB, standard footprint
Fig. 2.
Per device: Power derating curve
BCM857QAS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
24 April 2018
3 / 11
Nexperia
BCM857QAS
45 V, 100 mA PNP/PNP matched double transistors
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Per transistor
R
th(j-a)
thermal resistance
from junction to
ambient
thermal resistance
from junction to
ambient
in free air
[1]
-
-
544
K/W
Parameter
Conditions
Min
Typ
Max
Unit
Per device
R
th(j-a)
in free air
[1]
-
-
358
K/W
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
10
3
Z
th(j-a)
(K/W)
10
2
0.1
0.05
10
0.02
0.01
aaa-007378
duty cycle =
0.75
0.33
0.2
1
0.5
0
1
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig. 3.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
BCM857QAS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
24 April 2018
4 / 11
Nexperia
BCM857QAS
45 V, 100 mA PNP/PNP matched double transistors
10. Characteristics
Table 7. Characteristics
Symbol
Per transistor
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
C
e
f
T
Per device
h
FE1
/h
FE2
V
BE1
−V
BE2
[1]
[2]
[3]
[4]
Parameter
collector-base
breakdown voltage
collector-emitter
breakdown voltage
emitter-base
breakdown voltage
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
Conditions
I
C
= -100 µA; I
E
= 0 A
I
C
= -2 mA; I
B
= 0 A
I
C
= 0 A; I
E
= -100 µA
V
CB
= -30 V; I
E
= 0 A; T
amb
= 25 °C
V
CB
= -30 V; I
E
= 0 A; T
j
= 150 °C
V
EB
= -5 V; I
C
= 0 A; T
amb
= 25 °C
V
CE
= -5 V; I
C
= -10 µA; T
amb
= 25 °C
V
CE
= -5 V; I
C
= -2 mA; T
amb
= 25 °C
I
C
= -10 mA; I
B
= -0.5 mA; T
amb
= 25 °C
I
C
= -100 mA; I
B
= -5 mA; T
amb
= 25 °C
[1]
Min
-50
-45
-6
-
-
-
-
200
-
-
-
-
-600
-
-
-
100
Typ
-
-
-
-
-
-
250
290
-
-
-760
-900
-660
-710
-
10
175
Max
-
-
-
-15
-5
-100
-
450
-200
-400
-
-
-725
-820
4
-
-
Unit
V
V
V
nA
µA
nA
mV
mV
mV
mV
mV
mV
pF
pF
MHz
base-emitter saturation I
C
= -10 mA; I
B
= -0.5 mA; T
amb
= 25 °C
[2]
voltage
I
C
= -100 mA; I
B
= -5 mA; T
amb
= 25 °C
[2]
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
V
CE
= -5 V; I
C
= -2 mA; T
amb
= 25 °C
V
CE
= -5 V; I
C
= -10 mA; T
amb
= 25 °C
V
CB
= -10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
V
EB
= -0.5 V; I
C
= 0 A; f = 1 MHz;
T
amb
= 25 °C
V
CE
= -5 V; I
C
= -10 mA; f = 100 MHz;
T
amb
= 25 °C
V
CE
= -5 V; I
C
= -2 mA; T
amb
= 25 °C
[4]
[3]
[3]
DC current gain
matching
base-emitter voltage
matching
0.95
-
1
-
1.05
2
mV
Pulse test: t
p
≤ 300 μs; δ ≤ 0.02
V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
V
BE
decreases by about 2 mV/K with increasing temperature.
The smaller of the two values is subtracted from the larger value.
BCM857QAS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
24 April 2018
5 / 11
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