SO
T2
BCP56H series
80 V, 1 A NPN medium power transistors
Rev. 1 — 23 November 2016
Product data sheet
1. Product profile
1.1 General description
NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted
Device (SMD) plastic package.
Table 1.
Product overview
Package
NXP
BCP56H
BCP56-10H
BCP56-16H
SOT223
JEITA
SC-73
JEDEC
-
BCP53H
BCP53-10H
BCP53-16H
PNP complement
23
Type number
1.2 Features and benefits
High collector current capability I
C
and I
CM
Three current gain selections
High power dissipation capability
High-temperature applications up to 175
C
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators
MOSFET drivers
Low-side switches
Power management
Amplifiers
1.4 Quick reference data
Table 2.
Quick reference data
T
amb
= 25
C unless otherwise specified.
Symbol
V
CEO
I
C
I
CM
Parameter
collector-emitter voltage
collector current
peak collector current
single pulse; t
p
1 ms
Conditions
open base
Min
-
-
-
Typ
-
-
-
Max
80
1
2
Unit
V
A
A
NXP Semiconductors
BCP56H series
80 V, 1 A NPN medium power transistors
Table 2.
Quick reference data
…continued
T
amb
= 25
C unless otherwise specified.
Symbol
h
FE
Parameter
DC current gain
BCP56-10H
BCP56-16H
[1]
Pulse test: t
p
300
s;
= 0.02
Conditions
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
[1]
[1]
[1]
Min
63
63
100
Typ
-
-
-
Max
250
160
250
Unit
2. Pinning information
Table 3.
Pin
1
2
3
4
Pinning
Symbol
B
C
E
C
Description
base
collector
emitter
collector
1
2
3
E
sym123
Simplified outline
4
Graphic symbol
C
B
3. Ordering information
Table 4.
Ordering information
Package
Name
BCP56H
BCP56-10H
BCP56-16H
SC-73
Description
plastic surface-mounted package with increased
heatsink; 4 leads
Version
SOT223
Type number
4. Marking
Table 5.
BCP56H
BCP56-10H
BCP56-16H
Marking codes
Marking code
BCP56H
P5610H
P5616H
Type number
BCP56H_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet
Rev. 1 — 23 November 2016
2 of 16
NXP Semiconductors
BCP56H series
80 V, 1 A NPN medium power transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
peak base current
total power dissipation
single pulse;
t
p
1 ms
T
amb
25
C
[1]
[2]
[3]
[4]
[5]
Conditions
open emitter
open base
open collector
single pulse;
t
p
1 ms
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
55
65
Max
100
80
7
1
2
0.2
0.3
725
1.2
1.5
1.6
2.2
+175
+175
+175
Unit
V
V
V
A
A
A
A
mW
W
W
W
W
C
C
C
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
[5]
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 1 cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 6 cm
2
.
Device mounted on an FR4 PCB, 4-layer copper; tin-plated and standard footprint.
Device mounted on an FR4 PCB, 4-layer copper; tin-plated; mounting pad for collector 1 cm
2
.
BCP56H_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet
Rev. 1 — 23 November 2016
3 of 16
NXP Semiconductors
BCP56H series
80 V, 1 A NPN medium power transistors
2.5
P
tot
(W)
2
(1)
aaa-023841
(2)
1.5
(3)
(4)
1
(5)
0.5
0
-75
25
125
T
amb
(°C)
225
(1) FR4 PCB, 4-layer copper, 1 cm
2
(2) FR4 PCB, 4-layer copper, standard footprint
(3) FR4 PCB, single-sided copper, 6 cm
2
(4) FR4 PCB, single-sided copper, 1 cm
2
(5) FR4 PCB, single-sided copper, standard footprint
Fig 1.
10
I
C
(A)
1
Power derating curves
aaa-024290
t
p
= 10 µs
100 µs
1 ms
10 ms
100 ms
DC
DC; FR4 PCB, 4-layer copper;
collector mounting pad 1 cm
2
1s
10
-1
10
-2
10
-3
10
-1
1
10
10
2
V
CE
(V)
10
3
Unless otherwise specified:
T
amb
= 25
C
Single pulse
FR4 PCB, single-sided copper; standard footprint
Fig 2.
Safe operating area; junction to ambient; continuous and peak collector currents as a function of
collector-emitter voltage
BCP56H_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet
Rev. 1 — 23 November 2016
4 of 16
NXP Semiconductors
BCP56H series
80 V, 1 A NPN medium power transistors
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
Conditions
in free air
[1]
[2]
[3]
[4]
[5]
Min
-
-
-
-
-
-
Typ
-
-
-
-
-
-
Max
207
125
100
94
69
18
Unit
K/W
K/W
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
[4]
[5]
thermal resistance from junction to solder point
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 1 cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 6 cm
2
.
Device mounted on an FR4 PCB, 4-layer copper; tin-plated and standard footprint.
Device mounted on an FR4 PCB, 4-layer copper; tin-plated; mounting pad for collector 1 cm
2
.
10
3
Z
th(j-a)
(K/W)
10
2
aaa-023489
duty cycle = 1
0.75
0.50
0.33
0.20
0.10
10
0.05
0.02
0.01
0
1
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, single-sided copper, tin-plated and standard footprint
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BCP56H_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet
Rev. 1 — 23 November 2016
5 of 16
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