BGA5L1BN6
BGA5L1BN6
18dB High Gain Low Noise Amplifier for LTE Lowband
Features
•
•
•
•
•
•
•
•
•
Operating frequencies: 600 - 1000 MHz
Insertion power gain: 18.5 dB
Insertion Loss in bypass mode: 2.7 dB
Low noise figure: 0.7 dB
Low current consumption: 8.2 mA
Multi-state control: Bypass- and high gain-Mode
Ultra small TSNP-6-10 leadless package
RF output internally matched to 50 Ohm
Low external component count
0.7 x 1.1 mm
2
Application
The LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function
increases the overall system dynamic range and leads to more flexibility in the RF front-end.
In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to
the basestation the bypass mode can be activated reducing current consumption.
Product Validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
Block diagram
VCC
C
AI
ESD
AO
GND
BGA5L1BN6_Blockdiagram.vsd
Data Sheet
www.infineon.com
Revision 2.0
2018-03-15
BGA5L1BN6
18dB High Gain Low Noise Amplifier for LTE Lowband
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
2
3
4
5
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Data Sheet
2
Revision 2.0
2018-03-15
BGA5L1BN6
18dB High Gain Low Noise Amplifier for LTE Lowband
Features
1
Features
•
•
•
•
•
•
•
•
•
•
•
•
Insertion power gain: 18.5 dB
Insertion Loss in bypass mode: 2.7 dB
Low noise figure: 0.7 dB
Low current consumption: 8.2 mA
Operating frequencies: 600 - 1000 MHz
Multi-state control: Bypass- and High gain-Mode
Supply voltage: 1.5 V to 3.6 V
Ultra small TSNP-6-10 leadless package (footprint: 0.7 x 1.1 mm
2
)
B9HF Silicon Germanium technology
RF output internally matched to 50 Ohm
Low external component count
Pb-free (RoHS compliant) package
VCC
C
AI
ESD
AO
GND
BGA5L1BN6_Blockdiagram.vsd
Figure 1
Block Diagram
Product Name
BGA5L1BN6
Marking
3
Package
TSNP-6-10
Data Sheet
3
Revision 2.0
2018-03-15
BGA5L1BN6
18dB High Gain Low Noise Amplifier for LTE Lowband
Features
Description
The BGA5L1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 600 MHz to
1000 MHz. The LNA provides 18.5 dB gain and 0.7 dB noise figure at a current consumption of 8.2 mA in the
application configuration described in
Chapter 4.
In bypass mode the LNA provides an insertion loss of 2.7 dB.
The BGA5L1BN6 is based upon Infineon Technologies‘ B9HF Silicon Germanium technology. It operates from
1.5 V to 3.6 V supply voltage. The device features a single-line two-state control (Bypass- and High gain-Mode).
OFF-state can be enabled by powering down VCC.
Pin Definition and Function
Table 1
Pin No.
1
2
3
4
5
6
Pin Definition and Function
Name
GND
VCC
AO
GND
AI
C
Function
Ground
DC supply
LNA output
Ground
LNA input
Control
Data Sheet
4
Revision 2.0
2018-03-15
BGA5L1BN6
18dB High Gain Low Noise Amplifier for LTE Lowband
Maximum Ratings
2
Table 2
Parameter
Maximum Ratings
Maximum Ratings
Symbol
Min.
V
CC
V
AI
V
AO
V
C
V
GND
I
CC
P
IN
P
tot
T
J
T
A
T
STG
-0.3
-0.3
-0.3
-0.3
-0.3
–
–
–
–
-40
-55
–
–
–
–
–
–
–
–
–
–
–
Values
Typ.
Max.
3.6
0.9
V
CC
+ 0.3
V
CC
+ 0.3
0.3
16
+25
60
150
85
150
V
V
V
V
V
mA
dBm
mW
°C
°C
°C
Unit
Note or
Test Condition
1)
Voltage at pin VCC
Voltage at pin AI
Voltage at pin AO
Voltage at pin C
Voltage at pin GND
Current into pin VCC
RF input power
Total power dissipation,
T
S
< 148 °C
2)
Junction temperature
Ambient temperature range
Storage temperature range
–
–
–
–
–
–
–
–
–
–
1) All voltages refer to GND-Node unless otherwise noted
2)
T
S
is measured on the ground lead at the soldering point
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Maximum ratings are absolute ratings; exceeding only one of these values may cause
irreversible damage to the integrated circuit. Exposure to conditions at or below absolute
maximum rating but above the specified maximum operation conditions may affect device
reliability and life time. Functionality of the device might not be given under these conditions.
Data Sheet
5
Revision 2.0
2018-03-15
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