Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
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Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
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-
© Nexperia B.V. (year). All rights reserved.
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NXP Semiconductors
Product data sheet
Voltage regulator diodes
FEATURES
•
Total power dissipation:
max. 1 500 mW
•
Tolerance series: approx.
±5%
•
Working voltage range:
nom. 2.4 to 75 V (E24 range)
•
Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
•
General regulation functions.
1
handbook, halfpage
BZV90 series
PINNING
PIN
1
2, 4
3
anode
cathode
anode
DESCRIPTION
4
3
DESCRIPTION
Medium-power voltage regulator
diodes in SOT223 plastic SMD
packages.
The diodes are available in the
normalized E24 approx.
±5%
tolerance range. The series consists
of 37 types with nominal working
voltages from 2.4 to 75 V
(BZV90-C2V4 to C75).
1
Top view
2, 4
2
3
MAM242
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
I
F
I
ZSM
P
tot
P
ZSM
T
stg
T
j
Note
1. Device mounted on an FR4 double-sided copper-clad printed circuit-board; copper area = 2 cm
2
.
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
I
F
= 50 mA; see Fig.3
MIN.
−
MAX.
1.0
UNIT
V
PARAMETER
continuous forward current
non-repetitive peak reverse current
total power dissipation
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
t
p
= 100
μs;
square wave;
T
j
= 25
°C
prior to surge
T
amb
= 25
°C;
note 1
t
p
= 100
μs;
square wave;
T
j
= 25
°C
prior to surge; see Fig.2
CONDITIONS
−
see Table
“Per type”
−
−
−65
−
1 500
40
+150
150
mW
W
°C
°C
MIN.
MAX.
400
UNIT
mA
1999 May 17
2
Electronics Design Contest
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