Semiconductor
TBN4226 Series
Si NPN Transistor
SOT-323
Unit in mm
2.1±0.1
1.25±0.05
□
Applications
- VHF and UHF low noise amplifier
- Wide band amplifier
2.0±0.2
1.30±0.1
1
3
2
0.30±0.1
0.1 Min.
□
Features
- High gain bandwidth product
f
T
= 6 GHz at V
CE
= 3 V, I
C
= 7 mA
f
T
= 8 GHz at V
CE
= 3 V, I
C
= 30 mA
- High power gain
- Low noise figure
NF = 1.2 dB at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
|S
21
|
2
= 9.0 dB at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
0.90±0.1
Pin Configuration
1. Base
2. Emitter
3. Collector
□
Absolute Maximum Ratings
(T
A
= 25
℃)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Operating Junction Temperature
Storage Temperature
Symbol
BV
CBO
BV
CEO
BV
EBO
I
C
P
tot
T
j
T
stg
Ratings
20
8
3
100
150
150
-65 ~ 150
Unit
V
V
V
mA
mW
℃
℃
Caution
:
Electro Static Discharge
sensitive device
0~0.1
0.15±0.05
1
TBN4226 Series
□
Electrical Characteristics
(T
A
= 25
℃)
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Symbol
I
CBO
I
EBO
h
FE
f
T
|S
21
|
2
NF
C
re
Test Conditions
V
CB
= 15 V, I
E
= 0 mA
V
EB
= 2 V, I
C
= 0 mA
V
CE
= 3 V, I
C
= 7 mA
V
CE
= 3 V, I
C
= 7 mA
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CB
= 3 V, I
E
= 0 mA, f = 1 MHz
Min.
-
-
70
4.0
7.0
-
-
Typ.
-
-
100
6.0
9.0
1.2
0.9
Max.
0.5
0.5
250
-
-
2.0
1.4
GHz
dB
dB
pF
Unit
㎂
㎂
□
h
FE
Classification
Marking
h
FE
Value
SM2
70 - 140
SM1
125 - 250
□
Available Package
Product
TBN4226S
TBN4226U
TBN4226E
TBN4226KF
Package
SOT-23
SOT-323
SOT-523
SOT-623F
Unit in mm
Dimension
2.9
ⅹ
1.3, 1.2t
2.0
ⅹ
1.25, 1.0t
1.6
ⅹ
0.8, 0.8t
1.4
ⅹ
0.8, 0.6t
2
TBN4226 Series
□
Typical Characteristics ( T
A
= 25
℃
, unless otherwise specified)
Total Power Dissipation
vs. Ambient Temperature
Reverse Transfer Capacitance, C
re
(pF)
250
Reverse Transfer Capacitance
vs. Collector to Base Voltage
1.4
Total Power Dissipation, P
tot
(mW)
Free Air
200
f = 1 MHz
1.2
150
1.0
100
0.8
50
0.6
0
0
25
50
75
100
o
125
150
0.4
0
2
4
6
8
10
12
Ambient Temperature, T
A
( C)
Collector to Base Voltage, V
CB
(V)
DC Current Gain
vs. Collector Current
200
V
CE
= 3 V
150
Collector Current
vs. Base to Emitter Voltage
30
25
V
CE
= 3 V
Collector Current, I
C
(mA)
1
10
100
DC Current Gain, h
FE
20
15
10
5
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
100
50
0
0.1
Collector Current, I
C
(mA)
Base to Emitter Voltage, V
BE
(V)
3
TBN4226 Series
Collector Current
vs. Collector to Emitter Voltage
80
I
B
Step = 100
µ
A
14
Gain Bandwidth Product
vs. Collector Current
V
CE
= 3 V
Gain Bandwidth Product, f
T
(GHz)
70
12
10
8
6
4
2
0
Collector Current, I
C
(mA)
60
50
40
30
20
10
0
0
1
2
3
4
5
6
7
1
10
100
Collector to Emitter Voltage, V
CE
(V)
Collector Current, I
C
(mA)
Insertion Power Gain
vs. Frequency
30
25
20
15
10
5
0
0.1
Insertion Power Gain
vs. Collector Current
16
Insertion Power Gain, |S
21
| (dB)
Insertion Power Gain, |S
21
| (dB)
V
CE
= 3 V
I
C
= 7 mA
14
12
10
8
6
4
2
0
1
V
CE
= 3 V
f = 1 GHz
2
1
Frequency (GHz)
10
2
10
100
Collector Current, I
C
(mA)
4
TBN4226 Series
Maximum Available Gain
vs. Collector Current
20
Noise Figure
vs. Collector Current
6
Maximum Available Gain, MAG (dB)
18
16
14
12
10
8
6
4
2
0
1
V
CE
= 3 V
f = 1GHz
5
V
CE
= 3 V
f = 1 GHz
Noise Figure, NF (dB)
10
100
4
3
2
1
0
0.1
1
10
100
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Noise Parameter vs. Frequency
Frequency
(GHz)
0.9
1.0
1.5
2.0
Fmin (dB)
1.27
1.16
1.79
1.91
rn
0.11
0.09
0.08
0.11
Γ
opt
Mag
0.290
0.301
0.436
0.543
Phase
144.4
141.3
-162.9
-143.2
Association gain
(dB)
11.58
10.60
8.13
6.45
G
max
(dB)
12.98
11.83
8.57
6.89
5
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