Green
TB0640M - TB3500M
50A BIDIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTION DEVICE
Features
•
•
•
•
•
•
•
•
•
•
50A Peak Pulse Current @ 10/1000μs
250A Peak Pulse Current @ 8/20μs
58 - 320V Stand-Off Voltages
Oxide-Glass Passivated Junction
Bidirectional Protection In a Single Device
High Off-State impedance and Low On-State Voltage
Helps Equipment Meet GR-1089-CORE, IEC 61000-4-5, FCC
Part 68, ITU-T K.20/K.21, and UL497B
UL Listed Under Recognized Component Index, File Number
156346
Lead Free Finish/RoHS Compliant (Note 1)
Green Molding Compound (No Halogen and Antimony)
(Note 2)
Mechanical Data
•
•
•
•
•
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Case: SMB
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Lead Free Plating (Matte Tin Finish). Solderable per
MIL-STD-202, Method 208
Polarity: None; Bidirectional Devices Have No Polarity Indicator
Weight: 0.093 grams (approximate)
Top View
Bottom View
Ordering Information
(Note 3)
Part Number
TB0640M-13-F
TB0720M-13-F
TB0900M-13-F
TB1100M-13-F
TB1300M-13-F
TB1500M-13-F
TB1800M-13-F
TB2300M-13-F
TB2600M-13-F
TB3100M-13-F
TB3500M-13-F
Notes:
Case
SMB
SMB
SMB
SMB
SMB
SMB
SMB
SMB
SMB
SMB
SMB
Packaging
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
2. Product manufactured with Data Code 0924 (week 24, 2009) and newer are built with Green Molding Compound.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
YWW
xxxxx
xxxxx = Product type marking code
(See Electrical Characteristics table on page 3)
= Manufacturers’ code marking
YWW = Date code marking
Y = Last digit of year (ex: 2 for 2002)
WW = Week code (01 to 53)
TB0640M - TB3500M
Document number: DS30361 Rev. 10 - 2
1 of 6
www.diodes.com
November 2011
© Diodes Incorporated
TB0640M - TB3500M
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Non-Repetitive Peak Impulse Current
Non-Repetitive Peak On-State Current
Typical Positive Temperature Coefficient for Breakdown Voltage
Symbol
I
pp
I
TSM
ΔVBR/ΔT
j
Value
50
30
0.1
Unit
A
A
%/°C
@10/1000us
@8.3ms (one-half cycle)
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Lead
Thermal Resistance, Junction to Ambient
Junction Temperature Range
Storage Temperature Range
Symbol
R
θ
JL
R
θ
JA
T
J
T
STG
Value
20
100
-40 to +150
-55 to +150
Unit
°C/W
°C/W
°C
°C
Maximum Rated Surge Waveform
I
PP
, PEAK PULSE CURRENT (%)
Peak Value (I
pp
)
t
r
= rise time to peak value
t
p
= decay time to half value
Waveform
2/10 us
8/20 us
10/160 us
10/700 us
10/560 us
10/1000 us
Standard
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T, K.20/K.21
FCC Part 68
GR-1089-CORE
Ipp (A)
300
250
150
100
75
50
Half Value
t
r
t
p
TB0640M - TB3500M
Document number: DS30361 Rev. 10 - 2
2 of 6
www.diodes.com
November 2011
© Diodes Incorporated
TB0640M - TB3500M
Electrical Characteristics
Maximum
Rated
Repetitive
Off-State
Voltage
V
DRM
(V)
TB0640M
TB0720M
TB0900M
TB1100M
TB1300M
TB1500M
TB1800M
TB2300M
TB2600M
TB3100M
TB3500M
58
65
75
90
120
140
160
190
220
275
320
@T
A
= 25°C unless otherwise specified
Maximum
Breakover
Voltage
V
BO
(V)
77
88
98
130
160
180
220
265
300
350
400
Maximum
On-State
Voltage
@ I
T
= 1A
V
T
(V)
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
Breakover
Current
I
BO
Min
(mA)
50
50
50
50
50
50
50
50
50
50
50
Max
(mA)
800
800
800
800
800
800
800
800
800
800
800
Typical
Off-State
Capacitance
C
O
(pF)
140
140
140
90
90
90
90
60
60
60
60
T064M
T072M
T090M
T110M
T130M
T150M
T180M
T230M
T260M
T310M
T350M
Part Number
Maximum
Off-State
Leakage
Current @
V
DRM
I
DRM
(uA)
5
5
5
5
5
5
5
5
5
5
5
Holding Current
I
H
Min
(mA)
150
150
150
150
150
150
150
150
150
150
150
Max
(mA)
800
800
800
800
800
800
800
800
800
800
800
Marking
Code
Symbol
V
DRM
I
DRM
V
BR
I
BR
V
BO
I
BO
I
H
V
T
I
PP
C
O
Notes:
Parameter
Stand-off Voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Breakover current
Holding current
Note 4
On state voltage
Peak pulse current
Off-state capacitance
Note 5
4. I
H
> (V
L
/R
L
) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge recovery time does not
exceed 30ms.
5. Off-state capacitance measured at f = 1.0MHz, 1.0V
RMS
signal, V
R
= 2V
DC
bias.
I
I
PP
I
BO
I
H
I
BR
I
DRM
V
T
V
DRM
V
BR
V
BO
V
TB0640M - TB3500M
Document number: DS30361 Rev. 10 - 2
3 of 6
www.diodes.com
November 2011
© Diodes Incorporated
TB0640M - TB3500M
100
1.2
NORMALIZED BREAKDOWN VOLTAGE
I
(DRM)
, OFF-STATE CURRENT (uA)
10
1.15
1.1
1
1.05
0.1
V
DRM
= 50V
1
0.01
0.95
0.001
-25
25
50
75
100 125
150
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 1 Off-State Current vs. Junction Temperature
0
0.9
-25 0
25 50 75 100 125 150 175
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 2 Relative Variation of Breakdown Voltage vs. Junction Temperature
100
-50
1.1
NORMALIZED BREAKDOWN VOLTAGE
1.05
I
T
, ON-STATE CURRENT (A)
10
1
0.95
25 50 75 100 125 150 175
0
-50 -25
T
J
, JUNCTION TEMPERATURE (ºC)
Fig. 3 Relative Variation of Breakover Voltage vs. Junction Temperature
1
1
5
2
2.5
3.5
4.5
3
4
V
T
, ON-STATE VOLTAGE (V)
Fig. 4 On-State Current vs. On-State Voltage
1.5
1.4
1.3
NORMALIZED HOLDING CURRENT
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
75
-25
25
50
100 125
0
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 5 Relative Variation of Holding Current vs. Junction Temperature
-50
NORMALIZED CAPACITANCE
1
0.1
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 6 Relative Variation of Junction Capacitance vs. Reverse Voltage Bias
1
TB0640M - TB3500M
Document number: DS30361 Rev. 10 - 2
4 of 6
www.diodes.com
November 2011
© Diodes Incorporated
TB0640M - TB3500M
Package Outline Dimensions
B
SMB
Dim
Min
Max
A
3.30
3.94
B
4.06
4.57
C
1.96
2.21
D
0.15
0.31
E
5.00
5.59
G
0.05
0.20
H
0.76
1.52
J
2.00
2.50
All Dimensions in mm
A
C
D
J
H
G
E
Suggested Pad Layout
SMB
Value (in mm)
Dimensions
Z
6.8
G
1.8
X
2.3
Y
2.5
C
4.3
TB0640M - TB3500M
Document number: DS30361 Rev. 10 - 2
5 of 6
www.diodes.com
November 2011
© Diodes Incorporated
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