DMT3004LFG
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
30V
R
DS(ON)
max
4.5mΩ @ V
GS
= 10V
7.0mΩ @ V
GS
= 4.5V
I
D
max
T
C
= +25°
C
(Note 9)
25A
25A
Features and Benefits
Low R
DS(ON)
– Ensures on State Losses Are Minimized
Excellent Q
gd x
R
DS(ON
)
Product (FOM)
Advanced Technology for DC/DC Converters
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
Occupies Just 33% of The Board Area Occupied by SO-8
Enabling Smaller End Product
100% UIS (Avalanche) Rated
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
NEW PRODUCT
ADVANCE INFORMATION
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
Case: PowerDI 3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.072 grams (Approximate)
®
PowerDI3333-8
S
S
Pin 1
S
G
D
1
2
8
7
6
5
D
D
D
D
3
4
G
S
Equivalent Circuit
Top View
Bottom View
Top View
Ordering Information
(Note 4)
Part Number
DMT3004LFG-7
DMT3004LFG-13
Notes:
Case
PowerDI3333-8
PowerDI3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
YYWW
SG3
SG3 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 18 = 2018)
WW = Week Code (01 to 53)
PowerDI is a registered trademark of Diodes Incorporated.
DMT3004LFG
Document number: DS36944 Rev. 3 - 2
1 of 7
www.diodes.com
September 2018
© Diodes Incorporated
DMT3004LFG
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Notes 6 & 9) V
GS
= 10V
T
C
= +25°
C
T
C
= +70°
C
T
A
= +25°
C
T
A
= +70°
C
Symbol
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
I
AS
E
AS
Value
30
+20
-16
25
25
10.4
8.3
3
95
27
110
Unit
V
V
A
A
A
A
A
mJ
NEW PRODUCT
ADVANCE INFORMATION
Continuous Drain Current (Note 5) V
GS
= 10V
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, Duty Cycle = 1%)
Avalanche Current, L=0.3mH
Avalanche Energy, L=0.3mH
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
T
C
= +25°
C
T
A
= +25°
C
Symbol
P
D
R
JC
P
D
R
JA
T
J,
T
STG
Value
42
3
2.1
60
-55 to +150
Unit
W
°
C/W
W
°
C/W
°
C
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
30
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
3.5
5
0.7
2370
1360
240
0.6
20
44
7
8
6.2
4.3
21
8
25
37
Max
-
1
100
-100
3
4.5
7.0
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
μA
nA
V
mΩ
V
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 24V, V
GS
= 0V
V
GS
= +20V, V
DS
= 0V
V
GS
= -16V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 20A
V
GS
= 4.5V, I
D
= 7A
V
GS
= 0V, I
S
= 1A
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 15V, I
D
= 20A
pF
Ω
nC
ns
V
DD
= 15V, V
GS
= 10V,
R
L
= 0.75Ω, R
G
= 3Ω, I
D
= 20A
ns
nC
I
F
= 15A, di/dt = 500A/μs
5. R
JA
is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. R
JC
is guaranteed by design
while R
JA
is determined by the user’s board design.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Package limited.
DMT3004LFG
Document number: DS36944 Rev. 3 - 2
2 of 7
www.diodes.com
September 2018
© Diodes Incorporated
DMT3004LFG
30.0
V
GS
= 10V
25.0
I
D
, DRAIN CURRENT (A)
20.0
V
GS
= 4.0V
15.0
10.0
5.0
0.0
0
0.5
1
1.5
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.007
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
4
6
8
10
12
14
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
2
16
I
D
= 20A
V
GS
= 2.5V
V
GS
= 3.5V
V
GS
= 2.8V
30
V
DS
= 5V
25
I
D
, DRAIN CURRENT (A)
V
GS
= 4.5V
V
GS
= 3.0V
20
85
o
C
NEW PRODUCT
ADVANCE INFORMATION
15
10
125
o
C
5
25
o
C
-55
o
C
150
o
C
V
GS
= 2.2V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.006
V
GS
= 4.5V
0.005
0.004
V
GS
= 10V
0.003
0.002
0.001
0
5
10
15
20
25
30
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(Ω)
0.006
V
GS
=10V
0.005
125
o
C
150
o
C
R
DS(ON),
DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
2.5
2
V
GS
= 10V, I
D
= 20A
85
o
C
0.004
25
o
C
-55
o
C
0.003
1.5
1
V
GS
= 4.5V, I
D
= 15A
0.5
0.002
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
0
5
0
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
DMT3004LFG
Document number: DS36944 Rev. 3 - 2
3 of 7
www.diodes.com
September 2018
© Diodes Incorporated
DMT3004LFG
R
DS(ON),
DRAIN-SOURCE ON-RESISTANCE
(Ω)
V
GS(TH),
GATE THRESHOLD VOLTAGE (V)
0.008
0.007
V
GS
= 4.5V, I
D
= 15A
0.006
0.005
0.004
0.003
0.002
0.001
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
20
V
GS
= 0V
I
S
, SOURCE CURRENT (A)
15
T
J
= 125
o
C
10
T
J
= 150
o
C
5
T
J
= 25
o
C
T
J
= -55
o
C
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
1000
R
DS(ON)
Limited
P
W
=1ms
I
D
, DRAIN CURRENT (A)
8
100
P
W
=100µs
T
J
= 85
o
C
10000
f=1MHz
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
V
GS
= 10V, I
D
= 20A
2.5
2
I
D
= 1mA
1.5
I
D
= 250µA
NEW PRODUCT
ADVANCE INFORMATION
1
0.5
0
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
1000
C
oss
100
C
rss
10
0
5
10
15
20
25
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
6
V
GS
(V)
10
P
W
=10ms
1
P
W
=100ms
P
W
=1s
T
J(Max)
=150℃
T
A
=25℃
P
W
=10s
Single Pulse
DC
DUT on 1*MRP board
V
GS
=10V
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
4
V
DS
= 15V, I
D
= 20A
2
0.1
0
0
5
10
15
20
25
30
35
40
45
50
Q
g
(nC)
Figure 11. Gate Charge
0.01
0.01
DMT3004LFG
Document number: DS36944 Rev. 3 - 2
4 of 7
www.diodes.com
September 2018
© Diodes Incorporated
DMT3004LFG
1
r(t), TRANSIENT THERMAL RESISTANCE
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
R
θJA
(t)=r(t) * R
θJA
R
θJA
=51℃/W
Duty Cycle, D=t1/t2
D=0.7
D=0.9
NEW PRODUCT
ADVANCE INFORMATION
D=Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
DMT3004LFG
Document number: DS36944 Rev. 3 - 2
5 of 7
www.diodes.com
September 2018
© Diodes Incorporated
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