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SRA1090 C0G

Description
DIODE SCHOTTKY 90V 10A TO220AC
Categorysemiconductor    Discrete semiconductor   
File Size223KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

SRA1090 C0G Overview

DIODE SCHOTTKY 90V 10A TO220AC

SRA1090 C0G Parametric

Parameter NameAttribute value
Diode typeSchottky
Voltage - DC Reverse (Vr) (Maximum)90V
Current - average rectification (Io)10A
Voltage at different If - Forward (Vf850mV @ 10A
speedFast recovery = < 500 ns, > 200mA (Io)
Current at different Vr - Reverse leakage current100µA @ 90V
Capacitance at different Vr, F-
Installation typeThrough hole
Package/casingTO-220-2
Supplier device packagingTO-220AC
Operating Temperature - Junction-55°C ~ 150°C
SRA1020 thru SRA10150
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Schottky Barrier Rectifier
TO-220AC
MECHANICAL DATA
Case:
TO-220AC
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
5 in-lbs maximum
Weight:
1.88 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 2)
I
F
=10A
Maximum reverse current @ Rated VR
T
J
=25
T
J
=100
T
J
=125℃
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
0.55
0.5
I
R
dV/dt
R
θJC
T
J
T
STG
- 55 to +125
- 55 to +150
15
10
SRA
1020
20
14
20
SRA
1030
30
21
30
SRA
1040
40
28
40
SRA
1050
50
35
50
10
170
0.70
0.85
0.1
-
5
10000
2
- 55 to +150
V/μs
O
SRA
1060
60
42
60
SRA
1090
90
63
90
SRA
100
70
100
SRA
150
105
150
10100 10150
UNIT
V
V
V
A
A
0.95
V
mA
-
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0
μs,
1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
C/W
O
O
C
C
Document Number: DS_D1308052
Version: J13
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