DE150-501N04A
RF Power MOSFET
N-Channel Enhancement Mode
Low Q
g
and R
g
High dv/dt
Nanosecond Switching
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
DC
P
DHS
P
DAMB
R
thJC
R
thJHS
Symbol
Test Conditions
T
c
= 25°C
Derate 4.4W/°C above 25°C
T
c
= 25°C
V
DSS
I
D25
Maximum Ratings
500
500
±20
±30
4.5
27
4.5
-
3.5
>200
200
80
3.5
0.74
1.50
Characteristic Values
T
J
= 25°C unless otherwise specified
=
=
≤
=
500 V
4.5 A
1.5
Ω
200W
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
c
= 25°C
T
c
= 25°C, pulse width limited by T
JM
T
c
= 25°C
T
c
= 25°C
I
S
≤
I
DM
, di/dt
≤
100A/µs, V
DD
≤
V
DSS
,
T
j
≤
150°C, R
G
= 0.2Ω
I
S
= 0
R
DS(on)
P
DC
V
V
V
V
A
A
A
mJ
V/ns
V/ns
W
W
W
C/W
C/W
SG1
GATE
DRAIN
SG2
SD1
SD2
Features
min.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
T
J
T
JM
T
stg
T
L
Weight
1.6mm (0.063 in) from case for 10 s
V
GS
= 0 V, I
D
= 3 ma
V
DS
= V
GS
, I
D
= 250 a
V
GS
= ±20 V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
T
J
= 25°C
V
GS
= 0
T
J
= 125°C
V
GS
= 15 V, I
D
= 0.5I
D25
Pulse test, t
≤
300µS, duty cycle d
≤
2%
V
DS
= 60 V, I
D
= 0.5I
D25
, pulse test
typ.
max.
V
500
2.5
3.4
4
±100
25
250
1.2
1.9
-55
175
-55
300
2
+175
+175
1.5
•
Isolated Substrate
−
high isolation voltage (>2500V)
−
excellent thermal transfer
−
Increased temperature and power
•
•
−
−
•
•
•
cycling capability
IXYS advanced low Q
g
process
Low gate charge and capacitances
easier to drive
faster switching
Low R
DS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
V
nA
µA
µA
Ω
S
°C
°C
°C
°C
g
Advantages
•
Optimized for RF and high speed
•
•
High power density
switching at frequencies to >100MHz
Easy to mount—no insulators needed
DE150-501N04A
RF Power MOSFET
Symbol
Test Conditions
Characteristic Values
min.
typ.
max.
5
570
V
GS
= 0 V, V
DS
= 0.8 V
DSS(max)
,
f = 1 MHz
(
T
J
= 25°C unless otherwise specified
)
R
G
C
iss
C
oss
C
rss
C
stray
T
d(on)
T
on
T
d(off)
T
off
Q
g(on)
Q
gs
Q
gd
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
T
rr
Test Conditions
V
GS
= 0 V
Repetitive; pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle
≤
2%
V
GS
= 10 V, V
DS
= 0.5 V
DSS
I
D
= 0.5 I
D25
, Ig = 3 ma
V
GS
= 15 V, V
DS
= 0.8 V
DSS
I
D
= 0.5 I
DM
R
G
= 0.2
Ω
(External)
Back Metal to any Pin
Ω
pF
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
75
3
16
4
4
4
4
14
3.5
5.5
Characteristic Values
(
T
J
= 25°C unless otherwise specified
)
min.
typ.
max.
4.5
27
1.4
900
A
A
V
ns
CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device.
Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub-
lished in this document at any time and without notice.
For detailed device mounting and installation instructions, see the “Device
Installation & Mounting Instructions”
technical note on the
IXYSRF web site at;
http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
5,034,796
5,381,025
4,860,072
5,049,961
5,640,045
4,881,106
5,063,307
4,891,686
5,187,117
4,931,844
5,237,481
5,017,508
5,486,715
DE150-501N04A
RF Power MOSFET
Fig. 1
Typical Transfer Characteristics
V
DS
= 60V, PW = 20 S
Fig. 2
Typical Output Characteristics
18
16
Top
18
16
I
D
, Drain Current (A)
I
D
, Drain Currnet (A)
14
12
10
8
6
4
2
0
4
5
6
7
8
9
10
14
12
10
8
6
4
2
0
0
10V
9V
8V
7.5V
7V
6.5V
6V
5.5V
Bottom
5V
10
20
30
40
50
60
V
GS
, Gate-to Source Voltage (V)
V
DS
, Drain-to-Source Voltage
Fig. 3
Fig. 4
Gate Charge vs. Gate-to-Source Voltage
V
DS
= 250V, I
D
= 2.25A
1000
14
V
D S
Voltage vs. Capacitance
C
iss
C
oss
G ate-to-Source Voltage (V)
Capacitance (pF)
12
10
8
6
4
2
0
0
5
10
15
20
25
100
10
C
rss
1
0
50
100
150
200
250
300
350
400
Gate Charge (nC)
V
DS
Voltage (V)
DE150-501N04A
RF Power MOSFET
Fig. 5 Package drawing
Source
Source
Gate
Drain
Source
Source
DE150-501N04A
RF Power MOSFET
501N04A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 6. The model is an expansion of
the SPICE level 3 MOSFET model. It includes the stray inductive terms L
G
, L
S
and L
D
.
Rd is the R
DS(ON)
of the device, Rds is the resistive leakage term. The output capaci-
tance, C
OSS
, and reverse transfer capacitance, C
RSS
are modeled with reversed biased
diodes. This provides a varactor type response necessary for a high power device
model. The turn on delay and the turn off delay are adjusted via Ron and Roff.
Figure 6 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the IXYSRF web site at
http://www.ixysrf.com/products/switch_mode.html
http://www.ixysrf.com/spice/de150-501n04a.html
Net List:
*SYM=POWMOSN
.SUBCKT 501N04A 10 20 30
* TERMINALS: D G S
* 500 Volt 4.5 Amp 1.5 Ohm N-Channel Power MOSFET 10-30-2001
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 9.5
DON 6 2 D1
ROF 5 7 3.5
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 .6N
RD 4 1 1.5
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .1N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=6.0)
.MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N)
.MODEL D2 D (IS=.5F CJO=175P BV=500 M=.5 VJ=.6 TT=1N RS=10M)
.MODEL D3 D (IS=.5F CJO=250P BV=500 M=.3 VJ=.4 TT=400N RS=10M)
.ENDS
Doc #9200-0240 Rev 5
© 2009 IXYS RF
An
IXYS
Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: sales@ixyscolorado.com
Web: http://www.ixyscolorado.com
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