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BLF189XRAU

Description
BLF189XRA/SOT539/TRAY
Categorysemiconductor    Discrete semiconductor   
File Size1MB,14 Pages
ManufacturerAmphenol
Websitehttp://www.amphenol.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BLF189XRAU Overview

BLF189XRA/SOT539/TRAY

BLF189XRAU Parametric

Parameter NameAttribute value
Transistor typeLDMOS (dual), common source
frequency500MHz
Gain26.2dB
Voltage - Test50V
Rated current2.8µA
Noise Figure-
Current - Test150mA
Power - output1700W
Voltage - Rated135V
Package/casingSOT539A
Supplier device packagingSOT539A
BLF189XRA; BLF189XRAS
Power LDMOS transistor
Rev. 1 — 6 November 2017
Product data sheet
1. Product profile
1.1 General description
A 1700 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 500 MHz band.
Table 1.
Application information
f
(MHz)
pulsed RF
108
V
DS
(V)
50
P
L
(W)
1700
G
p
(dB)
26.2
D
(%)
74
Test signal
1.2 Features and benefits
Easy power control
Integrated dual sided ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 500 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications

BLF189XRAU Related Products

BLF189XRAU BLF189XRASU
Description BLF189XRA/SOT539/TRAY BLF189XRA/SOT539/TRAY
Transistor type LDMOS (dual), common source LDMOS (dual), common source
frequency 500MHz 500MHz
Gain 26.2dB 26.2dB
Voltage - Test 50V 50V
Rated current 2.8µA 2.8µA
Current - Test 150mA 150mA
Power - output 1700W 1700W
Voltage - Rated 135V 135V
Package/casing SOT539A SOT539B
Supplier device packaging SOT539A SOT539B
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