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MMBD4448HT-TP

Description
DIODE GEN PURP 80V 250MA SOT523
Categorysemiconductor    Discrete semiconductor   
File Size211KB,3 Pages
ManufacturerMicro Commercial Co
Environmental Compliance
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MMBD4448HT-TP Overview

DIODE GEN PURP 80V 250MA SOT523

MMBD4448HT-TP Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)80V
Current - average rectification (Io)250mA
Voltage at different If - Forward (Vf1.25V @ 150mA
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)4ns
Current at different Vr - Reverse leakage current100nA @ 70V
Capacitance at different Vr, F3.5pF @ 6V,1MHz
Installation typesurface mount
Package/casingSOT-523
Supplier device packagingSOT-523
Operating Temperature - Junction150°C (maximum)
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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MMBD4448HT/
HTA/HTC/HTS
Features
Fast Switching Speed
For General Purpose Switching Applications
High Conductance, Power Dissipation
Ultra-Small Surface Mount Package
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS Compliant. See ordering information)
Halogen
free available upon request by adding suffix "-HF"
150mW
Switching Diodes
SOT-523
A
D
Maximum Ratings
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
R
©
JA
P
D
T
J
T
STG
Symbol
V
(BR)
I
R
Rating
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Peak Forward Surge Current @1.0­s
@1.0s
Thermal Resistance Junction to Ambient
Power dissipation
Junction Temperature
Storage Temperature
Rating
100
80
57
500
250
4.0
2.0
833
150
150
-65 to +150
Unit
V
V
V
mA
mA
A
/W
mW
G
B
C
E
H
J
K
DIMENSIONS
INCHES
MIN
MAX
.059
.067
.030
.033
.057
.069
.020 Nominal
.035
.043
.000
.004
.028
.031
.004
.008
.010
.014
MM
MIN
MAX
1.50
1.70
0.75
0.85
1.45
1.75
0.50Nominal
0.90
1.10
.000
.100
.70
0.80
.100
.200
.25
.35
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Parameter
Reverse Breakdown Voltage
Reverse Voltage Leakage
Current
Min
80V
---
0.62
---
---
---
---
---
Max
---
0.1­A
25
nA
0.72V
0.855V
1.0V
1.25V
3.5pF
4.0ns
Test Conditions
I
R
=2.5­A
V
R
=70V
V
R
=20V
I
F
=5.0mA
I
F
=10mA
I
F
=100mA
I
F
=150mA
V
R
=6V, f=1MHZ
I
F
=5mA,
V
R
=6V
DIM
A
B
C
D
E
G
H
J
K
NOTE
V
F
C
T
t
rr
Forward Voltage
Total Capacitance
Reverse Recovery Time
Revision:
B
www.mccsemi.com
1 of 3
2013/01/01

MMBD4448HT-TP Related Products

MMBD4448HT-TP MMBD4448HTS-TP MMBD4448HTA-TP
Description DIODE GEN PURP 80V 250MA SOT523 DIODE ARRAY GP 80V 250MA SOT523 DIODE ARRAY GP 80V 250MA SOT523
Diode type standard standard standard
Voltage - DC Reverse (Vr) (Maximum) 80V 80V 80V
Voltage at different If - Forward (Vf 1.25V @ 150mA 1.25V @ 150mA 1.25V @ 150mA
speed Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr) 4ns 4ns 4ns
Current at different Vr - Reverse leakage current 100nA @ 70V 100nA @ 70V 100nA @ 70V
Installation type surface mount surface mount surface mount
Package/casing SOT-523 SOT-523 SOT-523
Supplier device packaging SOT-523 SOT-523 SOT-523
Operating Temperature - Junction 150°C (maximum) 150°C (maximum) 150°C (maximum)
Diode configuration - 1 pair in series 1 pair of common anodes
Current - average rectification (Io) (per diode) - 250mA 250mA

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