datasheet
EEWORLDEEWORLDEEWORLD
Datasheet
Part Number

Keyword

Search
Keyword

Part Number

Search
Datasheet> All Categories > Discrete semiconductor> The transistor> FP40R12KT3BOSA1
PDF
Preview

FP40R12KT3BOSA1

Description
IGBT MODULE VCES 1200V 40A
CategoryDiscrete semiconductor    The transistor   
File Size514KB，11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

FP40R12KT3BOSA1 Overview

IGBT MODULE VCES 1200V 40A

FP40R12KT3BOSA1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X24
Contacts24
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time12 weeks
Is SamacsysN
Shell connectionISOLATED
Maximum collector current (IC)55 A
Collector-emitter maximum voltage1200 V
ConfigurationCOMPLEX
JESD-30 codeR-XUFM-X24
Number of components7
Number of terminals24
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal off time (toff)610 ns
Nominal on time (ton)140 ns
Base Number Matches1

Preview

Download Datasheet
TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FP40R12KT3
VorläufigeDaten
PreliminaryData
V
CES

1200
40
55
80
210
+/-20
min.
T
vj
= 25°C
T
vj
= 125°C
V
CE sat
V
GEth
Q
G
R
Gint
C
ies
C
res
I
CES
I
GES
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
t
d on
5,0







typ.
1,80
2,05
5,8
0,33
6,0
2,50
0,09


0,09
0,09
0,03
0,05
0,42
0,52
0,07
0,09
4,10
5,80
3,60
4,20
max.
2,30
6,5




5,0
400

V
V
V
µC
Ω
nF
nF
mA
nA
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ

V

A
A
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
Gesamt-Verlustleistung
Totalpowerdissipation
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
T
vj
= 25°C
T
C
= 80°C, T
vj max
= 150°C
T
C
= 25°C, T
vj max
= 150°C
t
P
= 1 ms
T
C
= 25°C, T
vj max
= 150

I
C nom

I
C
I
CRM
P
tot
V
GES




A

W

V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
Gate-Schwellenspannung
Gatethresholdvoltage
Gateladung
Gatecharge
InternerGatewiderstand
Internalgateresistor
Eingangskapazität
Inputcapacitance
Rückwirkungskapazität
Reversetransfercapacitance
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
Anstiegszeit,induktiveLast
Risetime,inductiveload
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
Fallzeit,induktiveLast
Falltime,inductiveload
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
Kurzschlußverhalten
SCdata
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
I
C
= 40 A, V
GE
= 15 V
I
C
= 40 A, V
GE
= 15 V
I
C
= 1,50 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE
= -15 V ... +15 V
T
vj
= 25°C
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
V
CE
= 1200 V, V
GE
= 0 V, T
vj
= 25°C
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C
I
C
= 40 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 27
Ω
I
C
= 40 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 27
Ω
I
C
= 40 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 27
Ω
I
C
= 40 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 27
Ω
I
C
= 40 A, V
CE
= 600 V, L
S
= 45 nH
V
GE
= ±15 V
R
Gon
= 27
Ω
I
C
= 40 A, V
CE
= 600 V, L
S
= 45 nH
V
GE
= ±15 V
R
Goff
= 27
Ω
V
GE
≤
15 V, V
CC
= 900 V
V
CEmax
= V
CES
-L
sCE
·di/dt
proIGBT/perIGBT

t
r


t
d off


t
f


E
on


E
off
I
SC
R
thJC
T
vj op



-40


t
P
≤
10 µs, T
vj
= 125°C
160


A
0,60 K/W
125
°C
preparedby:AS
approvedby:RS
dateofpublication:2013-10-03
revision:2.0
1

FP40R12KT3BOSA1 Related Products

FP40R12KT3BOSA1 FP40R12KT3
Description IGBT MODULE VCES 1200V 40A IGBT Modules N-CH 1.2KV 55A
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? conform to conform to
Maker Infineon Infineon
Parts packaging code MODULE MODULE
package instruction FLANGE MOUNT, R-XUFM-X24 FLANGE MOUNT, R-XUFM-X24
Contacts 24 24
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Is Samacsys N N
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 55 A 55 A
Collector-emitter maximum voltage 1200 V 1200 V
Configuration COMPLEX COMPLEX
JESD-30 code R-XUFM-X24 R-XUFM-X24
Number of components 7 7
Number of terminals 24 24
Maximum operating temperature 150 °C 150 °C
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
Nominal off time (toff) 610 ns 610 ns
Nominal on time (ton) 140 ns 140 ns
Base Number Matches 1 1

Recommended Resources

Connection between remote control setting box and inverter

The third automatic control circuit that only allows the motor to run in one direction

DC-DC converter circuit diagram composed of CA3542

AC voltage stabilizing circuit

Digital paging system (F36-F/F36-J)

Shortcut:   S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

Popular Components

  1. A22NZ-BPA-UYA
  2. FMPS-06-01-L-S-RA-LC
  3. NML04K2N7TR
  4. HPD120SFGAO020
  5. PS02W8F5233T5E
  6. RS-2M301OHM0.5%E12
  7. PWC-PWC1206LF-200RD
  8. N998-03-53R6-FC
  9. A2547HE-22P+A2547-GP-B
  10. A2541WV-33P-C343D1201-G50
  11. MPP225J4261322LC
  12. 0402WGF9313TCE

Popular Articles

  1. New sensor evaluation board from Bosch - for rapid prototyping and faster development
  2. A brief analysis of OTA technology in cars
  3. Sila launches new silicon anode technology to increase EV battery energy density
  4. South Korean IC design companies face engineer shortage as they struggle to compete with Samsung
  5. How is an excellent vibrating level switch born?
  6. PIC16F15323 microcontroller (ADC) -- assembly + C language
  7. DB HiTek may use silicon-based gallium nitride technology to improve 8-inch semiconductor process
  8. AVR microcontroller interrupt implementation ATmega16 INT ISR (INT0_vect)
  9. 09-S3C2440 driver learning (Part 3) Embedded Linux platform bus driver and separation and layering driver framework
  10. Apple received 2,541 patents in the U.S. last year, ranking seventh

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

About Us Customer Service Contact Information Datasheet Sitemap LatestNews
Index Files: 2908  2692  2005  691  2309  59  55  41  14  47 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号