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FS75R12KE3BOSA1

Description
IGBT MODULE 1200V 75A
CategoryDiscrete semiconductor    The transistor   
File Size179KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

FS75R12KE3BOSA1 Overview

IGBT MODULE 1200V 75A

FS75R12KE3BOSA1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X28
Contacts28
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time16 weeks
Shell connectionISOLATED
Maximum collector current (IC)105 A
Collector-emitter maximum voltage1200 V
ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 codeR-XUFM-X28
Number of components6
Number of terminals28
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal off time (toff)610 ns
Nominal on time (ton)340 ns
Technische Information / technical information
IGBT-Module
IGBT-Modules
FS75R12KE3
Höchstzulässige Werte / maximum rated values
Elektrische Eigenschaften / electrical properties
Kollektor Emitter Sperrspannung
collector emitter voltage
Kollektor Dauergleichstrom
DC collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt Verlustleistung
total power dissipation
Gate Emitter Spitzenspannung
gate emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forward current
Grenzlastintegral
I²t value
Isolations Prüfspannung
insulation test voltage
t
p
= 1ms
V
R
= 0V, t
p
= 10ms, T
vj
= 125°C
RMS, f= 50Hz, t= 1min:
T
vj
= 25°C
T
c
= 80°C
T
c
= 25°C
t
p
= 1ms, T
c
= 80°C
T
c
= 25°C; Transistor
V
CES
I
C, nom
I
C
I
CRM
P
tot
V
GES
I
F
I
FRM
I²t
V
ISOL
1200
75
105
150
V
A
A
A
350
W
+20
V
75
A
150
A
1200
A²s
2,5
kV
Charakteristische Werte / characteristic values
Transistor Wechselrichter / transistor inverter
Kollektor Emitter Sättigungsspannung
collector emitter saturation voltage
Gate Schwellenspannung
gate threshold voltage
Gateladung
gate charge
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor Emitter Reststrom
collector emitter cut off current
Gate Emitter Reststrom
gate emitter leakage current
I
C
= 75A, V
GE
= 15V, T
vj
= 25°C
I
C
= 75A, V
GE
= 15V, T
vj
= 125°C
I
C
= 3,0mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE
= -15V...+15V
f= 1MHz, T
vj
= 25°C, V
CE
= 25V, V
GE
= 0V
f= 1MHz, T
vj
= 25°C, V
CE
= 25V, V
GE
= 0V
V
CE
= 1200V, V
GE
= 0V, T
vj
= 25°C
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
V
CEsat
V
GE(th)
Q
G
C
ies
C
res
I
CES
I
GES
min.
-
-
5,0
typ.
1,7
2,0
5,8
max.
2,15
-
6,5
V
V
V
-
-
-
0,7
-
-
-
µC
5,3
nF
0,2
nF
-
-
5
mA
-
-
400
nA
prepared by: MOD-D2; M. Münzer
approved: SM TM; Robert Severin
date of publication: 2002-09-03
revision: 3.0
1 (8)
DB_FS75R12KE3_3.0 .xls
2002-09-03

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Description IGBT MODULE 1200V 75A Fiber Optic Transmitters, Receivers, Transceivers SFH 756V
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? conform to conform to
Maker Infineon Infineon
Parts packaging code MODULE MODULE
package instruction FLANGE MOUNT, R-XUFM-X28 FLANGE MOUNT, R-XUFM-X28
Contacts 28 28
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 105 A 105 A
Collector-emitter maximum voltage 1200 V 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 code R-XUFM-X28 R-XUFM-X28
Number of components 6 6
Number of terminals 28 28
Maximum operating temperature 150 °C 150 °C
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
Nominal off time (toff) 610 ns 610 ns
Nominal on time (ton) 340 ns 340 ns
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