Data Sheet
FEATURES
Output power for 1 dB compression (P1dB): 16.5 dBm typical
Saturated output power (P
SAT
): 19 dBm typical
Gain: 14.5 dB typical
Noise figure: 1.5 dB
Output third order intercept (IP3): 26 dBm typical
Supply voltage: 7.5 V at 60 mA
50 Ω matched input/output
Die size: 2.55 mm x 1.62 mm x 0.05 mm
DC to 28 GHz, GaAs, pHEMT,
MMIC, Low Noise Amplifier
HMC8401
GENERAL DESCRIPTION
The
HMC8401
is a gallium arsenide (GaAs), pseudomorphic
high electron mobility transistor (pHEMT), monolithic microwave
integrated circuit (MMIC). The
HMC8401
is a wideband low
noise amplifier which operates between dc and 28 GHz. The
amplifier provides 14.5 dB of gain, 1.5 dB noise figure, 26 dBm
output IP3 and 16.5 dBm of output power at 1 dB gain compression
while requiring 60 mA from a 7.5 V supply. The
HMC8401
also
has a gain control option, V
GG
2. The
HMC8401
amplifier input/
outputs are internally matched to 50 Ω facilitating integration
into multichip modules (MCMs). All data is taken with the chip
connected via two 0.025 mm (1 mil) wire bonds of minimal
length 0.31 mm (12 mils).
APPLICATIONS
Test instrumentation
Microwave radios and very small aperture terminals (VSATs)
Military and space
Telecommunications infrastructure
Fiber optics
FUNCTIONAL BLOCK DIAGRAM
3
V
DD
4
ACG
HMC8401
RFOUT
2
V
GG
2
5
1
RFIN
V
GG
1
ACG
ACG
8
7
6
Figure 1.
Rev. B
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HMC8401
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
General Description ......................................................................... 1
Functional Block Diagram .............................................................. 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
0.01 GHz to 3 GHz Frequency Range........................................ 3
3 GHz to 26 GHz Frequency Range ........................................... 3
26 GHz to 28 GHz Frequency Range......................................... 4
Absolute Maximum Ratings............................................................ 5
ESD Caution .................................................................................. 5
Pin Configuration and Function Descriptions ............................. 6
Data Sheet
Interface Schematics .....................................................................7
Typical Performance Characteristics ..............................................8
Theory of Operation ...................................................................... 14
Applications Information .............................................................. 15
Biasing Procedures ..................................................................... 15
Mounting and Bonding Techniques for Millimeterwave GaAs
MMICs ......................................................................................... 15
Typical Application Circuit ....................................................... 16
Assembly Diagram ..................................................................... 16
Outline Dimensions ....................................................................... 17
Ordering Guide .......................................................................... 17
REVISION HISTORY
4/2018—Rev. A to Rev. B
Changes to Features Section............................................................ 1
Updated Outline Dimensions ....................................................... 17
Changes to Ordering Guide .......................................................... 17
9/2017—Rev. 0 to Rev. A
Changes to Supply Voltage Parameter, Table 1 ............................. 3
Changes to Supply Voltage Parameter, Table 2 ............................. 3
Changes to Supply Voltage Parameter, Table 3 ............................. 4
Changes to Thermal Resistance, θ
JC
(Channel to Die Bottom)
Parameter Heading, Table 4 ............................................................ 5
Changes to Table 5 ............................................................................ 6
Changes to Figure 7 .......................................................................... 7
Added Figure 41; Renumbered Sequentially .............................. 13
7/2016—Revision 0: Initial Version
Rev. B | Page 2 of 17
Data Sheet
SPECIFICATIONS
0.01 GHz TO 3 GHz FREQUENCY RANGE
HMC8401
T
A
= 25°C, V
DD
= 7.5 V, I
DQ
= 60 mA, V
GG
2 = open, unless otherwise stated.
1
When using V
GG
2, it is recommended to limit V
GG
2 from −2 V
to +2.6 V.
Table 1.
Parameter
FREQUENCY RANGE
GAIN
Gain Variation Over Temperature
RETURN LOSS
Input
Output
OUTPUT
Output Power for 1 dB Compression
Saturated Output Power
Output Third Order Intercept
NOISE FIGURE
SUPPLY CURRENT
Total Supply Current
SUPPLY VOLTAGE
1
Symbol
Test Conditions/Comments
Min
0.01
13
Typ
15
0.005
14
19
Max
3
Unit
GHz
dB
dB/°C
dB
dB
dBm
dBm
dBm
dB
mA
V
P1dB
P
SAT
IP3
NF
I
DQ
V
DD
14.5
Measurement taken at P
OUT
/tone = 10 dBm
17
19
27
2.5
60
7.5
4.5
4.5
8.5
Adjust the V
GG
1 supply voltage between −2 V and 0 V to achieve I
DQ
= 60 mA typical.
3 GHz TO 26 GHz FREQUENCY RANGE
T
A
= 25°C, V
DD
= 7.5 V, I
DQ
= 60 mA, V
GG
2 = open, unless otherwise stated.
1
When using V
GG
2, it is recommended to limit V
GG
2 from −2 V
to +2.6 V.
Table 2.
Parameter
FREQUENCY RANGE
GAIN
Gain Variation Over Temperature
RETURN LOSS
Input
Output
OUTPUT
Output Power for 1 dB Compression
Saturated Output Power
Output Third Order Intercept
NOISE FIGURE
SUPPLY CURRENT
Total Supply Current
SUPPLY VOLTAGE
1
Symbol
Test Conditions/Comments
Min
3
12.5
Typ
14.5
0.007
16
17
Max
26
Unit
GHz
dB
dB/°C
dB
dB
dBm
dBm
dBm
dB
mA
V
P1dB
P
SAT
IP3
NF
I
DQ
V
DD
14
Measurement taken at P
OUT
/tone = 10 dBm
16.5
19
26
1.5
60
7.5
4.5
4.5
8.5
Adjust the V
GG
1 supply voltage between −2 V and 0 V to achieve I
DQ
= 60 mA typical.
Rev. B | Page 3 of 17
HMC8401
26 GHz TO 28 GHz FREQUENCY RANGE
Data Sheet
T
A
= 25°C, V
DD
= 7.5 V, I
DQ
= 60 mA, V
GG
2 = open, unless otherwise stated.
1
When using V
GG
2, it is recommended to limit V
GG
2 from −2 V
to +2.6 V.
Table 3.
Parameter
FREQUENCY RANGE
GAIN
Gain Variation Over Temperature
RETURN LOSS
Input
Output
OUTPUT
Output Power for 1 dB Compression
Saturated Output Power
Output Third Order Intercept
NOISE FIGURE
SUPPLY CURRENT
Total Supply Current
SUPPLY VOLTAGE
1
Symbol
Test Conditions/Comments
Min
26
12.5
Typ
14.5
0.009
15
17
Max
28
Unit
GHz
dB
dB/°C
dB
dB
dBm
dBm
dBm
dB
mA
V
P1dB
P
SAT
IP3
NF
I
DQ
V
DD
11.5
Measurement taken at P
OUT
/tone = 10 dBm
14
17
24
2
60
7.5
4
4.5
8.5
Adjust the V
GG
1 supply voltage between −2 V and 0 V to achieve I
DQ
= 60 mA typical.
Rev. B | Page 4 of 17
Data Sheet
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Drain Bias Voltage (V
DD
)
Second Gate Bias Voltage (V
GG
2)
RF Input Power (RFIN)
Channel Temperature
Continuous Power Dissipation (P
DISS
),
T
A
= 85°C (Derate 18.3 mW/°C Above 85°C)
Thermal Resistance, θ
JC
(Channel to
Die Bottom)
Storage Temperature Range
Operating Temperature Range
ESD Sensitivity, Human Body Model (HBM)
Rating
+10 V
−2.6 V to +3.6V
20 dBm
175°C
1.67W
54°C/W
−65°C to +150°C
−55°C to +85°C
Class 1A, 250 V
HMC8401
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
ESD CAUTION
Rev. B | Page 5 of 17
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