TZ430N22KOFHPSA1 datasheet, PDF

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TZ430N22KOFHPSA1: DescriptionTHYRISTOR MODULE 2200V 430A; CategoryAnalog mixed-signal IC Trigger device; File Size444KB，13 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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TZ430N22KOFHPSA1 Overview

THYRISTOR MODULE 2200V 430A

TZ430N22KOFHPSA1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	FLANGE MOUNT, R-XXFM-X4
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	8 weeks
Shell connection	ISOLATED
Configuration	SINGLE
Maximum DC gate trigger current	250 mA
JESD-30 code	R-XXFM-X4
Number of components	1
Number of terminals	4
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum rms on-state current	1050 A
Off-state repetitive peak voltage	2200 V
Repeated peak reverse voltage	2200 V
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UNSPECIFIED
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR
Base Number Matches	1

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Netz-Thyristor-Modul

Phase Control Thyristor Module

Datenblatt / Data sheet

TZ430N

Kenndaten

Elektrische Eigenschaften / Electrical properties

Höchstzulässige Werte / Maximum rated values

Periodische Vorwärts- und Rückwärts-Spitzensperrspannung T

= -40°C... T

vj max

repetitive peak forward off-state and reverse voltages

Vorwärts-Stoßspitzensperrspannung

non-repetitive peak forward off-state voltage

Rückwärts-Stoßspitzensperrspannung

non-repetitive peak reverse voltage

Durchlaßstrom-Grenzeffektivwert

maximum RMS on-state current

Dauergrenzstrom

average on-state current

Stoßstrom-Grenzwert

surge current

Grenzlastintegral

I²t-value

Kritische Stromsteilheit

critical rate of rise of on-state current

Kritische Spannungssteilheit

critical rate of rise of off-state voltage

= 85°C

= 51°C

= 25 °C, t

= 10 ms

= T

vj max

, t

= 10 ms

= 25 °C, t

= 10 ms

= T

vj max

, t

= 10 ms

DIN IEC 747-6

f = 50 Hz, i

= 1 A, di

/dt = 1 A/µs

= T

vj max

, v

= 0,67 V

DRM

6.Kennbuchstabe / 6 letter C

6.Kennbuchstabe / 6 letter F

= -40°C... T

vj max

= +25°C... T

vj max

Elektrische Eigenschaften

DRM

RRM

1800

2200

DSM

RSM

TRMSM

TAVM

TSM

I²t

(di

/dt)

(dv

/dt)

1800

2200

1900

2300

2000 V

2400 V

2000 V

2400 V

2100 V

2500 V

1050 A

430 A

669 A

14000 A

12000 A

980000 A²s

720000 A²s

150 A/µs

500 V/µs

1000 V/µs

Charakteristische Werte / Characteristic values

Durchlaßspannung

on-state voltage

Schleusenspannung

threshold voltage

Ersatzwiderstand

slope resistance

Zündstrom

gate trigger current

Zündspannung

gate trigger voltage

Nicht zündender Steuerstrom

gate non-trigger current

Nicht zündende Steuerspannung

gate non-trigger voltage

Haltestrom

holding current

Einraststrom

latching current

Vorwärts- und Rückwärts-Sperrstrom

forward off-state and reverse current

Zündverzug

gate controlled delay time

= T

vj max

, i

= 1500 A

= T

vj max

= T

vj max

= 25°C, v

= 6 V

= 25°C, v

= 6 V

= T

vj max

, v

= 6 V

= T

vj max

, v

= 0,5 V

DRM

= T

vj max

, v

= 0,5 V

DRM

= 25°C, v

= 6 V, R

= 5

Ω

(TO)

max.

1,78 V

0,95 V

0,45 mΩ

max.

250 mA

2,2 V

10 mA

5 mA

0,25 V

300 mA

1500 mA

100 mA

4 µs

= 25°C, v

= 6 V, R

≥

Ω

= 1 A, di

/dt = 1 A/µs, t

= 20 µs

= T

vj max

= V

DRM

, v

= V

RRM

DIN IEC 747-6

= 25 °C,i

= 1 A, di

/dt = 1 A/µs

, i

2400 auf Anfrage / 2400V on request

prepared by: C.Drilling

approved by: M. Leifeld

date of publication:

revision:

11.03.04

BIP AC / 2004-03-11; C. Drilling

A 10/04

Seite/page

1/12

TZ430N22KOFHPSA1 Related Products

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Description	THYRISTOR MODULE 2200V 430A	50 mm PowerBLOCK Single Thyristor Modules for Phase Control are designed and assembled with high reliable pressure contact technology using an isolated copper base plate.	Silicon Controlled Rectifier, 669000mA I(T), 1800V V(RRM)	Silicon Controlled Rectifier, 669000mA I(T), 1800V V(RRM)	Silicon Controlled Rectifier, 669000mA I(T), 2400V V(RRM)	Silicon Controlled Rectifier, 669000mA I(T), 2400V V(RRM)	Silicon Controlled Rectifier, 669000mA I(T), 2200V V(RRM)	Silicon Controlled Rectifier, 669000mA I(T), 2000V V(RRM)
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
Maximum DC gate trigger current	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA
Repeated peak reverse voltage	2200 V	2200 V	1800 V	1800 V	2400 V	2400 V	2200 V	2000 V
Trigger device type	SCR	SCR	SCR	SCR	SCR	SCR	SCR	SCR
Base Number Matches	1	1	1	1	1	1	1	1
ECCN code	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Parts packaging code	-	MODULE	MODULE	MODULE	-	-	MODULE	MODULE
Contacts	-	4	4	4	-	-	4	4
Maximum DC gate trigger voltage	-	2.2 V	2.2 V	2.2 V	2.2 V	2.2 V	2.2 V	2.2 V
Quick connection description	-	G-GR	G-GR	G-GR	G-GR	G-GR	G-GR	G-GR
Description of screw terminals	-	A-K	A-K	A-K	A-K	A-K	A-K	A-K
Maximum holding current	-	300 mA	300 mA	300 mA	300 mA	300 mA	300 mA	300 mA
Maximum leakage current	-	100 mA	100 mA	100 mA	100 mA	100 mA	100 mA	100 mA
On-state non-repetitive peak current	-	14000 A	14000 A	14000 A	14000 A	14000 A	14000 A	14000 A
Maximum on-state current	-	669000 A	669000 A	669000 A	669000 A	669000 A	669000 A	669000 A
Maximum operating temperature	-	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C

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