NDT014L_NL datasheet, PDF - EEWORLD Datasheet

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NDT014L_NL: DescriptionPower Field-Effect Transistor, 2.8A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryThe transistor; File Size226KB，10 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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NDT014L_NL Overview

Power Field-Effect Transistor, 2.8A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

NDT014L_NL Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Fairchild
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	2.7 A
Maximum drain current (ID)	2.8 A
Maximum drain-source on-resistance	0.16 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	3 W
Maximum pulsed drain current (IDM)	10 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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August 1996

NDT014L

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

These N-Channel logic level enhancement mode power field

effect transistors are produced using Fairchild's proprietary,

high cell density, DMOS technology.This very high density

process is especially tailored to minimize on-state resistance,

provide superior switching performance, and withstand high

energy pulses in the avalanche and commutation

modes.Thesedevices are particularly suited for low voltage

applications such as DC motor control and DC/DC

conversion where fast switching, low in-line power loss, and

resistance to transients are needed.

Features

2.8 A, 60 V. R

DS(ON)

= 0.2

Ω

@ V

= 4.5 V

DS(ON)

= 0.16

Ω

@ V

= 10 V.

High density cell design for extremely low R

DS(ON)

High power and current handling capability in a widely used

surface mount package.

_________________________________________________________________________________

Absolute Maximum Ratings

Symbol

DSS

GSS

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current

= 25°C unless otherwise noted

NDT014L

± 20

(Note 1a)

Units

- Continuous

- Pulsed

± 2.8

± 10

Maximum Power Dissipation

(Note 1a)

(Note 1b)

(Note 1c)

1.3

1.1

-65 to 150

STG

Operating and Storage Temperature Range

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

°C/W

NDT014L Rev.D

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