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BLA8G1011L-300GU

Description
RF FET LDMOS 65V 16DB SOT502A
Categorysemiconductor    Discrete semiconductor   
File Size1MB,14 Pages
ManufacturerAmphenol
Websitehttp://www.amphenol.com/
Environmental Compliance
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BLA8G1011L-300GU Overview

RF FET LDMOS 65V 16DB SOT502A

BLA8G1011L-300GU Parametric

Parameter NameAttribute value
Transistor typeLDMOS
frequency1.06GHz
Gain16.5dB
Voltage - Test32V
Rated current-
Noise Figure-
Current - Test150mA
Power - output300W
Voltage - Rated65V
Package/casingSOT-502A
Supplier device packagingCDFM2
BLA8G1011L(S)-300;
BLA8G1011L(S)-300G
Power LDMOS transistor
Rev. 4 — 4 August 2016
Product data sheet
1. Product profile
1.1 General description
300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to
1090 MHz.
Table 1.
Test information
Typical RF performance at T
case
= 25
C in a class-AB production test circuit.
Test signal
pulsed RF
f
(MHz)
1060
V
DS
(V)
32
P
L
(W)
300
G
p
(dB)
16.5
D
(%)
56
t
r
(ns)
14
t
f
(ns)
5
1.2 Features and benefits
Easy power control
Integrated ESD protection
Enhanced ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1030 MHz to 1090 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range

BLA8G1011L-300GU Related Products

BLA8G1011L-300GU BLA8G1011L-300U BLA8G1011LS-300GU BLA8G1011LS-300U
Description RF FET LDMOS 65V 16DB SOT502A RF FET LDMOS 65V 16DB SOT502A RF FET LDMOS 65V 16DB SOT502E RF FET LDMOS 65V 16DB SOT502B
Transistor type LDMOS LDMOS LDMOS LDMOS
frequency 1.06GHz 1.06GHz 1.06GHz 1.06GHz
Gain 16.5dB 16.5dB 16.5dB 16.5dB
Voltage - Test 32V 32V 32V 32V
Current - Test 150mA 150mA 150mA 150mA
Power - output 300W 300W 300W 300W
Voltage - Rated 65V 65V 65V 65V
Package/casing SOT-502A SOT-502A SOT-502E SOT-502B
Supplier device packaging CDFM2 LDMOST CDFM2 SOT502B
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