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FQS4900TF

Description
MOSFET N/P-CH 60V/300V 8SOP
CategoryDiscrete semiconductor    The transistor   
File Size256KB,2 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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FQS4900TF Overview

MOSFET N/P-CH 60V/300V 8SOP

FQS4900TF Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
package instructionSMALL OUTLINE, R-PDSO-G8
Manufacturer packaging code751EB
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)1.3 A
Maximum drain current (ID)1.3 A
Maximum drain-source on-resistance0.65 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL AND P-CHANNEL
Maximum power dissipation(Abs)2 W
Maximum pulsed drain current (IDM)5.2 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
SOIC 8L Packing
Configuration: Figure 1.0
2 Reels per box
Antistatic Cover Tape
Generation
SOIC 8L Unit Orientation
Packing Description:
SOIC 8L parts are shipped in tape. The carrier
tape is made from a dissipative (carbon filled)
polycarbonate resin. The cover tape is a
multilayer film (Heat Activated Adhesive in
nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed
agent. These reeled parts in standard option are
shipped with 2500 units per 13” or 330cm
diameter reel. The reels are dark blue or black
in color and is made of polystyrene plastic (anti-
static coated). This and some other options are
further described in the Packing Information
table.
These full reels are individually barcode labeled
and placed inside a standard intermediate box
(illustrated in figure 1.0) made of recyclable
corrugated brown paper. One box contains
three reels maximum. And these boxes are
placed inside a barcode labeled shipping box
which comes in different sizes depending on the
number of parts shipped.
Static Dissipative
Embossed Carrier Tape
F63TNR Label
F63TNR Label
SOIC 8L Packing Information
Packing Option
Packing type
Qty per Reel/Tube/Bag
Reel Size
Inner Box Dimension (mm)
Max qty per inner Box
Out Box Dimension(mm)
Max qty per outer Box
Standard
TNR
2500
13” Dia
355X334X40
5000
360X360X300
35,000
BOXTNR Label
Reel Barcode Label Sample_(F63TNR)
LOT:
FSID:
D/C1:
QTY1:
QTY2:
SPEC REV:
Pb-free
D/C2:
RoHS
COMPLIANT
AR
QTY:
SPEC:
2nd Level interconnect:
1.Category e3
2.Maximum safe temperature 360C
3.MSL N/A
FAIRCHILD SEMICONDUCTOR.
(F63TNR)6.1
BBX Label
Outer box(35,000cap)
Inner Box Barcode Label Sample_(BOXTNR)
LOT:
FSID:
D/C1:
D/C2:
QTY1:
QTY2:
SPEC REV:
Pb-free
RoHS
COMPLIANT
AR
QTY:
SPEC:
Outer Box Barcode Label Sample_(BBX)
PART ID :
QTY :
2013/ 04 /01
07:30:00
BG:SA
DC :
2nd Level interconnect:
1.Category e3
2.Maximum safe temperature 360C
3.MSL N/A
FAIRCHILD SEMICONDUCTOR.
(BOXTNR)3.1
T90831301
FAIRCHILD SEMICONDUCTOR CORPORATION.
(BBX)1.3
SOIC 8L Tape Leader and Trailer
Configuration: Figure 2.0
Carrier Tape
Cover Tape
Components
Trailer Tape
640mm minimum or
80 empty pockets
Leader Tape
1680mm minimum or
210 empty pockets
NOTES:
A. ALL DIMENSION ARE IN MILLIMETERS UNLESS
OTHERWISE SPECIFIED
B. DRAWING FILE NAME: MKT-M08A Rev 1

FQS4900TF Related Products

FQS4900TF FQS4903TF
Description MOSFET N/P-CH 60V/300V 8SOP MOSFET 2N-CH 500V 0.37A 8SOP
Brand Name ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Lead free
package instruction SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8
Manufacturer packaging code 751EB 751EB
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Factory Lead Time 1 week 5 weeks
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 500 V
Maximum drain current (Abs) (ID) 1.3 A 0.37 A
Maximum drain current (ID) 1.3 A 0.37 A
Maximum drain-source on-resistance 0.65 Ω 6.2 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G8 R-PDSO-G8
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 2 2
Number of terminals 8 8
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL AND P-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 2 W 2 W
Maximum pulsed drain current (IDM) 5.2 A 1.48 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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