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FQD12N20 / FQU12N20
— N-Channel QFET
®
MOSFET
October 2013
FQD12N20 / FQU12N20
N-Channel QFET
®
MOSFET
200 V,
9
A,
280
mΩ
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
• 9 A, 200 V, R
DS(on)
= 280 mΩ (Max.) @ V
GS
= 10 V,
I
D
= 4.5 A
• Low Gate Charge (Typ. 18 nC)
• Low Crss (Typ. 18 pF)
• 100% Avalanche Tested
• RoHS Compliant
D
D
G
S
D-PAK
I-PAK
G
D
S
G
S
Absolute Maximum Ratings
T
Symbol
*
4
4
*
<
4
<
!$
8
C
= 25 C unless otherwise noted.
o
Parameter
1
,)562
1
,/((62
8
FQD12N20TM / FQU12N20TU
)((
'(
57
9:
±9(
Unit
*
%
%
%
*
=
%
=
*$
@
@
@$6
6
6
8
1
,)562?
8
1
,)562
"!)56
+
C
)/(
'(
55
55
)5
55
( AA
55B/5(
9((
Thermal Characteristics
Symbol
R
JC
R
JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction to Ambient (*1 in
2
pad of 2 oz copper), Max.
FQD12N20TM
FQU12N20TU
2.27
110
50
o
C/W
Unit
©2009
Fairchild Semiconductor Corporation
FQD12N20 / FQU12N20
Rev. C1
1
www.fairchildsemi.com
Microcontroller MCU
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