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FDMC8010ET30 N-Channel PowerTrench
®
MOSFET
January 2015
FDMC8010ET30
N-Channel PowerTrench
®
MOSFET
30 V, 174 A, 1.3 mΩ
Features
Extended T
J
rating to 175°C
Max r
DS(on)
= 1.3 mΩ at V
GS
= 10 V, I
D
= 30 A
Max r
DS(on)
= 1.8 mΩ at V
GS
= 4.5 V, I
D
= 25 A
High performance technology for extremely low r
DS(on)
Termination is Lead-free and RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
®
process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for applications where ultra low r
DS(on)
is
required in small spaces such as High performance VRM, POL
and Oring functions.
Applications
DC - DC Buck Converters
Point of Load
High Efficiency Load Switch and Low Side Switching
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θCA
is determined by the user's board design.
a. 53 °C/W when mounted on a
1 in
2
pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
SS
SF
DS
DF
G
2. Pulse Test: Pulse Width < 300
μs,
Duty cycle < 2.0 %.
3. E
AS
of 153 mJ is based on starting T
J
= 25
°
C, L = 0.3 mH, I
AS
= 32 A, V
DD
= 27 V, V
GS
= 10 V. 100% test at L = 0.1 mH, I
AS
= 47 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
5. Pulsed Id please refer to Fig 11 SOA graph for more details.
6.Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
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