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TPH2900ENH,L1Q

Description
MOSFET N-CH 200V 33A SOP8
Categorysemiconductor    Discrete semiconductor   
File Size234KB,9 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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TPH2900ENH,L1Q Overview

MOSFET N-CH 200V 33A SOP8

TPH2900ENH,L1Q Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)200V
Current - Continuous Drain (Id) at 25°C33A(Ta)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs29 milliohms @ 16.5A, 10V
Vgs (th) (maximum value) when different Id4V @ 1mA
Gate charge (Qg) at different Vgs (maximum value)22nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)2200pF @ 100V
FET function-
Power dissipation (maximum)78W(Tc)
Operating temperature150°C(TJ)
Installation typesurface mount
Supplier device packaging8-SOP Advance(5x5)
Package/casing8-PowerVDFN
TPH2900ENH
MOSFETs
Silicon N-channel MOS (U-MOS-H)
TPH2900ENH
1. Applications
High-Efficiency DC-DC Converters
Switching Voltage Regulators
2. Features
(1)
(2)
(3)
(4)
(5)
High-speed switching
Small gate charge: Q
SW
= 8.2 nC (typ.)
Low drain-source on-resistance: R
DS(ON)
= 24 mΩ (typ.) (V
GS
= 10 V)
Low leakage current: I
DSS
= 10
µA
(max) (V
DS
= 200 V)
Enhancement mode: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1.0 mA)
3. Packaging and Internal Circuit
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
SOP Advance
Start of commercial production
1
2014-12
2014-11-07
Rev.3.0
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