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MT29F2G16AADWP:D TR

Description
IC FLASH 2G PARALLEL 48TSOP I
Categorystorage   
File Size803KB,88 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

MT29F2G16AADWP:D TR Overview

IC FLASH 2G PARALLEL 48TSOP I

MT29F2G16AADWP:D TR Parametric

Parameter NameAttribute value
memory typenon-volatile
memory formatflash memory
technologyFLASH - NAND
storage2Gb (128M x 16)
Write cycle time - words, pages-
memory interfacein parallel
Voltage - Power2.7 V ~ 3.6 V
Operating temperature0°C ~ 70°C(TA)
Installation typesurface mount
Package/casing48-TFSOP (0.724", 18.40mm wide)
Supplier device packaging48-TSOP I
Micron Confidential and Proprietary
2Gb x8, x16: NAND Flash Memory
Features
NAND Flash Memory
MT29F2G08AAD, MT29F2G16AAD,
MT29F2G08ABD, MT29F2G16ABD
Features
• Open NAND Flash Interface (ONFI) 1.0-compliant
• Single-level cell (SLC) technology
• Organization
Page size:
• x8: 2,112 bytes (2,048 + 64 bytes)
• x16: 1,056 words (1,024 + 32 words)
Block size: 64 pages (128K + 4K bytes)
Device size: 2Gb: 2,048 blocks
• READ performance
Random READ: 25µs
Sequential READ: 25ns (3.3V)
Sequential READ: 35ns (1.8V)
• WRITE performance
PROGRAM PAGE: 220µs (TYP 3.3V)
,
PROGRAM PAGE: 300µs (TYP 1.8V)
,
BLOCK ERASE: 500µs (TYP)
• Data retention: 10 years
• Endurance: 100,000 PROGRAM/ERASE cycles
• First block (block address 00h) guaranteed to be
valid with ECC when shipped from factory
1
• Industry-standard basic NAND Flash command set
• Advanced command set:
PROGRAM PAGE CACHE MODE
PAGE READ CACHE MODE
One-time programmable (OTP) commands
BLOCK LOCK (1.8V only)
PROGRAMMABLE DRIVE STRENGTH
READ UNIQUE ID
• Operation status byte provides a software method of
detecting:
Operation completion
Pass/fail condition
Write-protect status
• Ready/busy# (R/B#) signal provides a hardware
method of detecting operation completion
• WP# signal: write protect entire device
• RESET required as first command after power-up
• INTERNAL DATA MOVE operations supported
• Alternate method of device initialization
(Nand_Init) after power up
4
(Contact Factory)
Figure 1:
63-Ball VFBGA
Options
• Density
2
: 2Gb (single die)
• Device width: x8, x16
• Configuration:
# of die
# of CE# # of R/B#
I/O
1
1
1
Common
• V
CC
: 2.7–3.6V
• V
CC
: 1.65–1.95V
• Package
48-pin TSOP type I CPL
3
(lead-free plating, 3.3V
only)
63-ball VFBGA (lead-free, 1.8V only)
• Operating temperature:
Commercial (0°C to +70°C)
Extended (–40°C to +85°C)
1. See “Error Management” on page 61.
2. For part numbering and markings, see
Figure 2 on page 2 and Figure 3 on page 3.
3. CPL = center parting line
4. Available only in 1.8V VFBGA package.
PDF: 09005aef82784784 / Source: 09005aef82784840
NDA_2gb_nand_m59a__1.fm - Rev. A 8/08 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2007 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
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