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DTC143TUARVG

Description
Small Signal Bipolar Transistor
CategoryThe transistor   
File Size146KB,3 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

DTC143TUARVG Overview

Small Signal Bipolar Transistor

DTC143TUARVG Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
Is SamacsysN
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
DTC143 TM/TE/TUA/TCA/TSA
NPN Small Signal Transistor
Small Signal Product
Features
Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistor
(see equivalent circuit).
The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
Only the on/off conditions need to be set for
operation, marking device design easy.
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code.
Equivalent Circuit
Ordering Information (example)
Part No.
DTC143 TM
Package
SOT-723
Packing
8K / 7" Reel
Packing code
RM
Packing code
(Green)
RMG
Marking
03
Manufacture code
M0
Note : Detail please see "Ordering Information(detail, example)" below
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Parameter
Power Dissipation
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction and Storage Temperature Range
Symbol
PD
V
BR(CBO)
V
BR(CEO)
V
BR(EBO)
I
C
T
J
, T
STG
Value
TM
100
TE
150
TUA / TCA
200
50
50
5
100
-55 to + 150
TSA
300
Unit
mW
V
V
V
mA
°C
Notes : 1. Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
Min
50
50
5
Typ
Max
Condtion
Ic=50μA
Ic=1mA
I
E
=50μA
Unit
V
V
V
μA
μA
V
KΩ
0.5
0.5
0.3
100
3.29
4.7
250
600
6.11
V
CB
=50V
V
EB
=4V
I
C
=5mA , I
B
=0.25mA
V
CE
=5V , I
C
=1mA
V
CE
=10V , I
E
=5mA , f=100MHz
MHz
Version : B13

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