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VI30M120C-M3/4W

Description
DIODE SCHOTTKY 30A 120V TO-262AA
Categorysemiconductor    Discrete semiconductor   
File Size149KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

VI30M120C-M3/4W Overview

DIODE SCHOTTKY 30A 120V TO-262AA

VI30M120C-M3/4W Parametric

Parameter NameAttribute value
Diode configuration1 pair of common cathodes
Diode typeSchottky
Voltage - DC Reverse (Vr) (Maximum)120V
Current - average rectification (Io) (per diode)15A
Voltage at different If - Forward (Vf980mV @ 15A
speedFast recovery = < 500 ns, > 200mA (Io)
Current at different Vr - Reverse leakage current800µA @ 120V
Operating Temperature - Junction-40°C ~ 175°C
Installation typeThrough hole
Package/casingTO-262-3, long lead, I²Pak, TO-262AA
Supplier device packagingTO-262AA
V30M120C, VI30M120C
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.52 V at I
F
= 5 A
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS
®
TO-220AB
TO-262AA
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
K
2
1
V30M120C
PIN 1
PIN 3
PIN 2
CASE
3
1
2
3
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
VI30M120C
PIN 1
PIN 3
PIN 2
K
MECHANICAL DATA
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 15 A
T
J
max.
Package
Diode variations
2 x 15 A
120 V
150 A
0.68 V
175 °C
TO-220AB, TO-262AA
Common cathode
Case:
TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
as marked
Mounting Torque:
10 in-lbs maximum
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
dV/dt
T
J
, T
STG
V30M120C
120
30
15
150
10 000
-40 to +175
V/μs
°C
A
VI30M120C
UNIT
V
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
Revision: 09-Nov-17
Document Number: 89464
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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