BG5120K
Dual N-Channel MOSFET Tetrode
•
Low noise gain controlled input stages for UHF
and VHF -tuners e. g. (NTSC, PAL)
•
Two AGC amplifiers in one single package
•
Integrated gate protection diodes
•
Low noise figure, high AGC-range
•
Improved cross modulation at gain reduction
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
4
5
6
1
2
3
BG5120K
6
5
4
Drain
A
1
2
B
3
AGC
RF
Input RG1
VGG
G2
G1
GND
RF Output
+ DC
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BG5120K
Package
SOT363
1=G1* 2=G2
Pin Configuration
3=G1** 4=D**
5=S
6=D*
Marking
K1
* For amp. A; ** for amp. B
180° rotated tape loading orientation available
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
Storage temperature
Channel temperature
Symbol
V
DS
I
D
±I
G1/2SM
±V
G1/G2S
P
tot
T
stg
T
ch
1
Value
8
20
1
6
200
-55 ... 150
150
Unit
V
mA
V
mW
°C
2009-10-01
BG5120K
Thermal Resistance
Parameter
Channel - soldering point
1)
1
For
Symbol
R
thchs
Value
≤
280
Unit
K/W
calculation of
R
thJA please refer to Application Note Thermal Resistance
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
DC Characteristics
Drain-source breakdown voltage
I
D
= 10 µA,
V
G1S
= 0 ,
V
G2S
= 0
Gate1-source breakdown voltage
+I
G1S
= 10 mA,
V
G2S
= 0 ,
V
DS
= 0
Gate2-source breakdown voltage
+I
G2S
= 10 mA,
V
G1S
= 0 ,
V
DS
= 0
Gate1-source leakage current
V
G1S
= 6 V,
V
G2S
= 0 ,
V
DS
= 0
Gate2-source leakage current
V
G2S
= 6 V,
V
G1S
= 0 ,
V
DS
= 0
Drain current
V
DS
= 5 V,
V
G1S
= 0 ,
V
G2S
= 4 V
Drain-source current
V
DS
= 5 V,
V
G2S
= 4 V,
R
G1
= 100 kΩ
Gate1-source pinch-off voltage
V
DS
= 5 V,
V
G2S
= 4 V,
I
D
= 20 µA
Gate2-source pinch-off voltage
V
DS
= 5 V,
I
D
= 20 µA,
V
G1S
= 2 V
V
G2S(p)
-
0.6
-
V
G1S(p)
-
0.7
-
I
DSX
-
12
-
I
DSS
-
-
10
+I
G2SS
-
-
50
+I
G1SS
-
-
50
+V
(BR)G2SS
6
-
15
+V
(BR)G1SS
6
-
15
V
(BR)DS
12
-
-
typ.
max.
Unit
V
µA
nA
µA
mA
V
2
2009-10-01
BG5120K
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Unit
AC Characteristics
V
DS
= 5V ,
V
G2S
=4V, (I
D
=10mA) (verified by random sampling)
-
30
-
Forward transconductance
g
fs
mS
Gate1 input capacitance
f
= 10 MHz
Output capacitance
f
= 10 MHz
Power gain
800 MHz
45 MHz
Noise figure
800 MHz
45 MHz , 45 MHz
Gain control range
V
G2S
= 4 ... 0 V,
f
= 800 MHz
C
g1ss
C
dss
G
p
-
-
2.2
1.4
-
-
pF
dB
-
-
23
30
1.1
0.7
-
-
-
dB
-
-
-
-
-
dBµV
90
-
96
-
87
100
-
-
-
F
∆G
p
45
Cross-modulation
k
=
1%,
f
W
=
50MHz,
f
unw
=
60MHz
X
mod
AGC
= 0 dB
AGC
= 10 dB
AGC
= 40 dB
3
2009-10-01
BG5120K
Total power dissipation
P
tot
=
ƒ(T
S
)
Drain current
I
D
=
ƒ(I
G1
)
V
G2S
= 4V
300
30
mA
mW
24
22
P
tot
200
I
D
150
100
50
0
0
120
°C
20
18
16
14
12
10
8
6
4
2
20
40
60
80
100
150
0
-1
1
3
5
7
9
11
µA
14
T
S
I
G1
Output characteristics
I
D
=
ƒ(V
DS
)
Gate 1 current
I
G1
=
ƒ(V
G1S
)
V
DS
= 5V
V
G2S
= Parameter
15
90
mA
1.4V
12
11
µA
4.0V
70
3.0V
9
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
I
G1
50
10
1.3V
60
2.5V
I
D
1.2V
40
30
2.0V
1.1V
20
10
0
0
V
9
0.5
1
1.5
V
2.5
V
D
V
G
1
4
2009-10-01
BG5120K
Gate 1 forward transconductance
g
fs
=
ƒ(I
D
)
V
DS
= 5V,
V
G2S
= Parameter
40
mS
Drain current
I
D
=
ƒ(V
G1S
)
V
DS
= 5V
V
G2S
= Parameter
14
mA
12
11
10
4.0V
2.0V
4.0 V
3.0 V
2.0 V
1.5 V
30
g
fs
I
D
25
9
8
1.5V
20
7
6
15
5
4
3
2
1
1.0V
10
5
0
0
2
4
6
8
10
12
14
16
mA
20
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
V
2
I
D
V
G
1
Drain current
I
D
=
ƒ(V
GG
)
V
DS
= 5V,
V
G2S
= 4V,
R
G1
= 150kΩ
(connected to
V
GG,
V
GG =gate1 supply voltage)
12
mA
Drain current
I
D
=
ƒ(V
GG
)
V
DS
= 5V,
V
G2S
= 4V
R
G1
= Parameter in kΩ
20
mA
10
9
8
16
14
I
D
I
D
82 k
100 k
120 k
150 k
7
6
5
4
3
2
1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
V
12
10
8
6
4
2
0
0
V
5
0.5
1
1.5
2
2.5
3
3.5
4
5
V
GG
V
GG
=V
DS
5
2009-10-01
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