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TMPG06-8.2HE3/54

Description
TVS DIODE 6.63V 12.5V MPG06
CategoryDiscrete semiconductor    diode   
File Size80KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

TMPG06-8.2HE3/54 Overview

TVS DIODE 6.63V 12.5V MPG06

TMPG06-8.2HE3/54 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
Reach Compliance Codeunknown
ECCN codeEAR99
Factory Lead Time20 weeks 1 day
Breakdown voltage nominal value8.2 V
Maximum clamping voltage12.5 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 codee3
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage6.63 V
surface mountNO
Terminal surfaceMatte Tin (Sn)
TMPG06-6.8 thru TMPG06-43A
Vishay General Semiconductor
Automotive Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Patented PAR
®
construction
• Available in uni-directional polarity only
• 400 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty
cycle): 0.01 %
*
nted
ate
P
Patent #'s
*
4,980,315
5,166,769
5,278,094
• Excellent clamping capability
• Very fast response time
Case Style MPG06
• Low incremental surge resistance
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case:
MPG06, molded epoxy over passivated junction
Molding compound meets UL 94 V-0 flammability
rating
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
PRIMARY CHARACTERISTICS
V
BR
P
PPM
P
D
I
FSM
T
J
max.
6.8 V to 43 V
400 W
1.0 W
40 A
185 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak power dissipation with a 10/1000 µs waveform
(1)
SYMBOL
(Fig. 1)
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
LIMIT
400
See next table
1.0
40
3.5
- 65 to + 185
UNIT
W
A
W
A
V
°C
Peak pulse current with a 10/1000 µs waveform
(1)(2)
(Fig. 3)
Power dissipation on infinite heatsink at T
L
= 75 °C (Fig. 5)
Peak forward surge current 8.3 ms single half sine-wave
(2)
Maximum instantaneous forward voltage at 25 A
(2)
Operating junction and storage temperature range
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
Document Number: 88404
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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