2N4261UB
PNP Small Signal Silicon Transistor
Qualified per MIL-PRF-19500/511
Qualified Levels:
JAN, JANTX, JANTXV
and JANS
Compliant
available
DESCRIPTION
This 2N4261UB small signal transistor features ceramic bodied construction with a metal lid
for military grade products per MIL-PRF-19500/511.
It is also available with a ceramic lid in the
UBC package or
in a hermetically sealed metal TO-72 package.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
Surface mount equivalent of popular JEDEC registered 2N4261 number
JAN, JANTX, JANTXV and JANS qualification is available per MIL-PRF-19500/511
(See
part nomenclature
for all available options.)
RoHS compliant
UB Package
Also available in:
UBC package
APPLICATIONS / BENEFITS
(Ceramic Lid surface mount)
2N4261UBC
•
•
•
Low-profile ceramic bodied surface mount package (see package illustration)
Lightweight
Military and other high-reliability applications
TO-72 package
(leaded)
2N4261
MAXIMUM RATINGS
@ T
A
= 25 ºC
Parameters/Test Conditions
Junction and Storage Temperature
(1)
Thermal Resistance Junction-to-Ambient
Collector – Emitter Voltage
Collector – Base Voltage
Emitter - Base Voltage
(1)
(1)
Total Power Dissipation
@ T
A
= +25 ºC
(2)
@ T
C
= +25 ºC
Collector Current
NOTES:
1. Derate linearly 1.14 mW/°C above T
A
= +25°C
Symbol
T
J
& T
STG
R
ӨJA
V
CEO
V
CBO
V
EBO
P
T
I
C
Value
-65 to +200
0.860
-15
-15
-4.5
0.2
-30
Unit
o
C
o
C/W
V
V
V
W
mA
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0150-1, Rev 1 (10/9/13)
©2013 Microsemi Corporation
Page 1 of 4
2N4261UB
MECHANICAL and PACKAGING
•
•
•
•
•
•
CASE: Ceramic
TERMINALS: Gold plating over nickel under plate
MARKING: Part number, date code, manufacturer’s ID
TAPE & REEL option: Standard per EIA-418D. Consult factory for quantities.
WEIGHT: Less than 0.04 grams
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN level
JANTX = JANTX level
JANTXV = JANTXV level
JANS = JANS level
Blank = Commercial grade
2N4261
UB
Surface Mount package
JEDEC type number
(see
Electrical Characteristics
table)
Symbol
I
B
I
C
V
CB
V
CBO
V
CE
V
CEO
V
CC
V
EBO
V
EB
SYMBOLS & DEFINITIONS
Definition
Base current: The value of the dc current into the base terminal.
Collector current: The value of the dc current into the collector terminal.
Collector-base voltage: The dc voltage between the collector and the base.
Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is
open-circuited.
Collector-emitter voltage: The dc voltage between the collector and the emitter.
Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base
terminal is open-circuited.
Collector-supply voltage: The supply voltage applied to a circuit connected to the collector.
Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the collector terminal
open-circuited.
Emitter-base voltage: The dc voltage between the emitter and the base
T4-LDS-0150-1, Rev 1 (10/9/13)
©2013 Microsemi Corporation
Page 2 of 4
2N4261UB
ELECTRICAL CHARACTERISTICS
@ 25 ºC unless otherwise noted
Parameters / Test Conditions
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= -10 mA
Collector-Base Cutoff Current
V
CB
= -15 V
Emitter-Base Cutoff Current
V
EB
= -4.5 V
Collector-Emitter Cutoff Current
V
CE
= -10 V, V
BE
= -0.4 V
V
CE
= -10 V, V
BE
= -2.0 V
ON CHARACTERISTICS
Forward-Current Transfer Ratio
I
C
= -1.0 mA, V
CE
= -1.0 V
I
C
= -10 mA, V
CE
= -1.0 V
I
C
= -30 mA, V
CE
= -1.0 V
Collector-Emitter Saturation Voltage
I
C
= -1.0 mA, I
B
= -0.1 mA
I
C
= -10 mA, I
B
= -1.0 mA
Base-Emitter Saturation Voltage (Non-Saturated)
V
CE
= -1.0 V, I
C
= -1.0 mA
V
CE
= -1.0 V, I
C
= -10 mA
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Small–Signal Forward Current Transfer
Ratio
I
C
= -5.0 mA, V
CE
= 4.0 V, f = 100 MHz
I
C
= -10 mA, V
CE
= 10 V, f = 100 MHz
Output Capacitance
V
CB
= -4 V, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
Input Capacitance
V
EB
= -0.5V, I
C
= 0, 100 kHz
≤
f
≤
1.0 MHz
(1)
Symbol
Min
Max
Unit
V
(BR)CEO
I
CBO
I
EBO
I
CEX
-15
-10
-10
-50
-5
V
µA
µA
nA
nA
h
FE
25
30
20
150
V
CE(sat)
-0.15
-0.35
-0.8
-1.0
V
V
BE
V
Symbol
|h
fe
|
Min
Max
Unit
15
20
2.5
2.5
pF
pF
C
obo
C
ibo
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
V
CC
= -17 V; I
C
= -10 mA
Turn-Off Time
V
CC
= -17 V; I
C
= -10 mA
(1) Pulse Test: pulse width = 300
µs,
duty cycle
≤
2.0%
Symbol
t
on
t
off
Min
Max
2.5
3.5
Unit
ns
ns
T4-LDS-0150-1, Rev 1 (10/9/13)
©2013 Microsemi Corporation
Page 3 of 4
2N4261UB
PACKAGE DIMENSIONS
Symbol
BH
BL
BW
CL
CW
LL1
LL2
Dimensions
inch
millimeters
Min
Max
Min
Max
0.046
.056
1.17
1.42
0.115
0.128
2.92
3.25
0.085
0.108
2.16
2.74
-
0.128
-
3.25
-
0.108
-
2.74
0.022
0.038
0.56
0.97
0.017
0.035
0.43
0.89
Note
Symbol
LS1
LS2
LW
r
r1
r2
Dimensions
inch
millimeters
Min
Max
Min
Max
0.035
0.039
0.89
0.99
0.071
0.079
1.80
2.01
0.016
0.024
0.41
0.61
-
0.008
-
0.20
-
0.012
-
0.31
-
0.022
-
.056
Note
NOTES:
1. Dimensions are in inches. Millimeters are given for information only.
2. Ceramic package only.
3. Hatched areas on package denote metallized areas.
4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
T4-LDS-0150-1, Rev 1 (10/9/13)
©2013 Microsemi Corporation
Page 4 of 4
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