1N4002 datasheet, PDF - EEWORLD Datasheet

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1N4002: Description1 A, 100 V, SILICON, SIGNAL DIODE, DO-41; Categorysemiconductor Discrete semiconductor; File Size83KB，3 Pages; ManufacturerMCC; Websitehttp://www.mccsemi.com

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1N4002 Overview

1 A, 100 V, SILICON, SIGNAL DIODE, DO-41

1N4002 Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
state	TRANSFERRED
packaging shape	round
Package Size	LONG FORM
Terminal form	Wire
terminal coating	tin lead
Terminal location	AXIAL
Packaging Materials	Plastic/Epoxy
structure	single
Shell connection	isolation
Diode component materials	silicon
Diode type	Signal diode
Maximum reverse recovery time	2 us
Maximum repetitive peak reverse voltage	100 V
Maximum average forward current	1 A

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MCC

Features

•

omponents

21201 Itasca Street Chatsworth

!"#

$ % !"#

1N4001

THRU

1N4007

Low Current Leakage

Metalurgically Bonded Construction

Low Cost

1 Amp Rectifier

50 - 1000 Volts

•

Maximum Ratings

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

Maximum Thermal Resistance; 20

°C/W

Junction To Lead

MCC

Catalog

Number

Device

Marking

Maximum

Recurrent

Peak

Reverse

Voltage

50V

100V

200V

400V

600V

800V

1000V

Maximum

RMS

Voltage

Maximum

Blocking

Voltage

50V

100V

200V

400V

600V

800V

1000V

DO-41

1N4001

1N4002

1N4003

1N4004

1N4005

1N4006

1N4007

---

35V

70V

140V

280V

420V

560V

700V

Cathode

Mark

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

F(AV)

1.0A

= 75°C

Current

Peak Forward Surge

FSM

30A

8.3ms, half sine

Current

Maximum

1.1V

= 1.0A;

Instantaneous

Forward Voltage

= 25°C*

Maximum DC

Reverse Current At

5.0µA

= 25°C

Rated DC Blocking

50µA

= 125°C

Voltage

Typical Junction

15pF

Measured at

Capacitance

1.0MHz, V

=4.0V

*Pulse test: Pulse width 300

µsec,

Duty cycle 2%

DIMENSIONS

INCHES

MIN

.166

.080

.028

1.000

MIN

4.10

2.00

.70

25.40

DIM

MAX

.205

.107

.034

---

MAX

5.20

2.70

.90

---

NOTE

www.mccsemi.com

1N4002 Related Products

	1N4002	1N4001	1N4003	1N4004	1N4005	1N4006	1N4007
Description	1 A, 100 V, SILICON, SIGNAL DIODE, DO-41	1 A, SILICON, SIGNAL DIODE	1 A, SILICON, SIGNAL DIODE, DO-41	1 A, 400 V, SILICON, SIGNAL DIODE, DO-41	1 A, 600 V, SILICON, SIGNAL DIODE, DO-41	1 A, 800 V, SILICON, SIGNAL DIODE, DO-41	1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
Number of terminals	2	2	2	2	2	2	2
Number of components	1	1	1	1	1	1	1
state	TRANSFERRED	ACTIVE	TRANSFERRED	ACTIVE	ACTIVE	ACTIVE	ACTIVE
packaging shape	round	round	round	round	round	ROUND	round
Package Size	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Terminal form	Wire	Wire	Wire	Wire	Wire	WIRE	Wire
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Packaging Materials	Plastic/Epoxy	UNSPECIFIED	Glass	UNSPECIFIED	Plastic/Epoxy	PLASTIC/EPOXY	Plastic/Epoxy
structure	single	single	single	single	single	SINGLE	single
Shell connection	isolation	isolation	isolation	isolation	isolation	ISOLATED	isolation
Diode component materials	silicon	silicon	silicon	silicon	silicon	SILICON	silicon
Diode type	Signal diode	Signal diode	Signal diode	Signal diode	Signal diode	SIGNAL DIODE	Signal diode
Maximum average forward current	1 A	1 A	1 A	1 A	1 A	1 A	1 A
terminal coating	tin lead	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED	-
Maximum repetitive peak reverse voltage	100 V	-	-	400 V	600 V	800 V	1000 V
Processing package description	-	MINIATURE PACKAGE-2	ALF-2, DO-41, 2 PIN	CASE R-1, 2 PIN	PLASTIC PACKAGE-2	ROHS COMPLIANT, PLASTIC, DO-204AL, 2 PIN	PLASTIC PACKAGE-2

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