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1N4002

Description
1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size143KB,3 Pages
ManufacturerTransys Electronics Limited
Websitehttp://www.transyselectronics.com
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1N4002 Overview

1 A, 100 V, SILICON, SIGNAL DIODE, DO-41

1N4002 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
stateTRANSFERRED
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingtin lead
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typeSignal diode
Maximum reverse recovery time2 us
Maximum repetitive peak reverse voltage100 V
Maximum average forward current1 A
1N4001 THRU 1N4007
PLASTIC SILICON RECTIFIER
VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere
FEATURES
l
l
l
l
l
Low forward voltage drop
High current capability
High reliability
High surge current capability
Exceeds environmental standards of MIL-S-19500/228
DO-41
MECHANICAL DATA
Case: Molded plastic , DO-41
Epoxy: UL 94V-O rate flame retardant
Lead: Axial leads, solderable per MIL-STD-202,
method 208 guaranteed
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.012 ounce, 0.3 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 UNITS
Maximum Recurrent Peak Reverse Voltage
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
35
75
140
280
420
560
700
V
Maximum DC Blocking Voltage
50
100
200
400
600
800
1000
V
1.0
A
Maximum Average Forward Rectified
Current .375"(9.5mm) Lead Length at
T
A
=75
Peak Forward Surge Current 8.3ms single
30
A
half sine-wave superimposed on rated load
(JEDEC method)
Maximum Forward Voltage at 1.0A DC and
1.1
V
25
Maximum Full Load Reverse Current Full
30
A
Cycle Average at 75 Ambient
Maximum Reverse Current at T
A
=25
5.0
A
At Rated DC Blocking Voltage T
A
=100
500
A
Typical Junction capacitance (Note 1)
15
P
F
Typical Thermal Resistance (Note 2) R JA
50
/W
Typical Thermal resistance (NOTE 2) R JL
25
/W
Operating and Storage Temperature Range
-55 to +150
T
J
,T
STG

1N4002 Related Products

1N4002 1N4003 1N4004 1N4005 1N4006 1N4007
Description 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
Number of terminals 2 2 2 2 2 2
Number of components 1 1 1 1 1 1
state TRANSFERRED TRANSFERRED ACTIVE ACTIVE ACTIVE ACTIVE
packaging shape round round round round ROUND round
Package Size LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Terminal form Wire Wire Wire Wire WIRE Wire
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Packaging Materials Plastic/Epoxy Glass UNSPECIFIED Plastic/Epoxy PLASTIC/EPOXY Plastic/Epoxy
structure single single single single SINGLE single
Shell connection isolation isolation isolation isolation ISOLATED isolation
Diode component materials silicon silicon silicon silicon SILICON silicon
Diode type Signal diode Signal diode Signal diode Signal diode SIGNAL DIODE Signal diode
Maximum average forward current 1 A 1 A 1 A 1 A 1 A 1 A
Maximum repetitive peak reverse voltage 100 V - 400 V 600 V 800 V 1000 V
Processing package description - ALF-2, DO-41, 2 PIN CASE R-1, 2 PIN PLASTIC PACKAGE-2 ROHS COMPLIANT, PLASTIC, DO-204AL, 2 PIN PLASTIC PACKAGE-2
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