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1N4002G

Description
SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size172KB,2 Pages
ManufacturerGood-Ark
Websitehttp://www.goodark.com/
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1N4002G Overview

SIGNAL DIODE

1N4002G Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeSIGNAL DIODE
1N4001G THRU 1N4007G, BY133G
GLASS PASSIVATED JUNCTION RECTIFIER
Reverse Voltage -
50 to 1300 Volts
Forward Current -
1.0 Ampere
Features
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
High temperature metallurgically bonded construction
Glass passivated cavity-free junction
Capable of meeting environmental standards of
MIL-S-19500
1.0 ampere operation at T
A
=75 with no thermal runaway
Typical I
R
less than 0.1 A
High temperature soldering guaranteed:
350 /10 seconds, 0.375” (9.5mm) lead length,
5 lbs. (2.3Kg) tension
Mechanical Data
Case:
DO-41 molded plastic over glass body
Terminals:
Plated axial leads, solderable per
MIL-STD-750, method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.012 ounce, 0.335 gram
DIM ENSIONS
DIM
A
B
C
D
inches
Min.
0.165
0.079
0.028
1.000
Max.
0.205
0.106
0.034
-
Min.
4.2
2.0
0.71
25.40
mm
Max.
5.2
2.7
0.86
-
Note
Maximum Ratings and Electrical Characteristics
Ratings at 25
ambient temperature unless otherwise specified.
Symbols
1N
4001G
1N
4002G
1N
4003G
1N
4004G
1N
4005G
1N
4006G
1N
4007G
BY
133G
Units
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
=75
Peak forward surge current
8.3mS single half sine-wave superimposed
on rated load (MIL-STD-750D 4066 method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
T
A
=25
T
A
=125
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
T
rr
C
J
R
R
JA
JL
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30.0
1.1
5.0
50.0
2.0
8.0
55.0
25.0
600
420
600
800
560
800
1000
700
1000
1300
910
1300
Volts
Volts
Volts
Amp
Amps
Volts
A
S
F
/W
Typical reverse recovery time (Note 1)
Typical junction capacitance (Note 2)
Typical thermal resistance (Note 3)
Operating junction and storage temperature range
T
J
, T
STG
-65 to +175
Notes:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0MHz and applied reverse voltage of 4.0 volts
(3) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted
1

1N4002G Related Products

1N4002G 1N4001G 1N4003G 1N4004G 1N4005G 1N4006G BY133G
Description SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL
state ACTIVE ACTIVE ACTIVE DISCONTINUED ACTIVE - ACTIVE
Diode type SIGNAL DIODE Signal diode Signal diode Signal diode SIGNAL DIODE - Signal diode
Number of terminals - 2 - 2 2 - 2
Number of components - 1 - 1 1 - 1
Processing package description - Plastic, DO-41, 2 PIN - PLASTIC PACKAGE-2 GREEN, PLASTIC PACKAGE-2 - Plastic, DO-41, 2 PIN
packaging shape - round - round ROUND - round
Package Size - LONG FORM - LONG FORM LONG FORM - LONG FORM
Terminal form - Wire - Wire WIRE - Wire
Terminal location - AXIAL - AXIAL AXIAL - AXIAL
Packaging Materials - Plastic/Epoxy - Plastic/Epoxy PLASTIC/EPOXY - Plastic/Epoxy
structure - single - single SINGLE - single
Shell connection - isolation - isolation ISOLATED - isolation
Diode component materials - silicon - silicon SILICON - silicon
Maximum repetitive peak reverse voltage - 50 V - 400 V 600 V - 50 V
Maximum average forward current - 1 A - 1 A 1 A - 1 A

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